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| D G S TO-247 ARF462A ARF462B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 65 Volt, 40.68 MHz Characteristics: * Output Power = 150 Watts. * Gain = 15dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. P E R 1 IM L A IN All Ratings: TC = 25C unless otherwise specified. ARF462A/B UNIT Volts Y R 200 200 23 30 250 0.50 -55 to 150 300 Amps Volts Watts C/W C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage (I D(ON) = 11.5A, VGS = 10V) MIN TYP MAX UNIT Volts 200 2.5 25 A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 4 3 6.5 8 5 nA mhos 050-5997 Rev A 7-2001 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6W MIN TYP ARF462A/B MAX UNIT 1350 435 200 7 5 23 12 15 10 40 25 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz IDQ = 100 mA VDD = 65V MIN TYP MAX UNIT dB % 13 50 15 55 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 15 Class C VDD = 150V 10 5 0 30 P 45 E R Pout = 150W CAPACITANCE (pf) IM L A IN 10000 5000 1000 500 Y R Ciss Coss Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 100 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 ID, DRAIN CURRENT (AMPERES) TJ = -55C ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 96 OPERATION HERE LIMITED BY RDS (ON) 6 1mS 4 10 5 10mS 050-5997 Rev A 7-2001 2 TJ = +125C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics TJ = -55C 1 TC =+25C TJ =+150C SINGLE PULSE 100mS DC 1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF462A/B 1.2 1.1 1.0 0.9 0.8 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 20 VGS=10 & 15V 8V 7.5V 7V 15 10 6.5V 6V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 160 Class C VDD = 150V 5 5.5V 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics f = 81.36 MHz 120 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 14 POUT, POWER OUT (WATTS) 12 Class C VDD = 150V f = 81.36 MHz 80 40 0 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 1 , THERMAL IMPEDANCE (C/W) 0.1 0.05 Y R A IN IM L E R P 10 8 2 6 0 D=0.5 0.2 0.1 0.05 Note: PDM 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 0.02 0.01 0.005 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 qJC Peak TJ = PDM x ZJC + TC Z 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin () 20.4 - j 9.6 2.0 - j 6.5 .42 - j 2.3 .20 - j .38 .36 + j 2.0 ZOL () 10.1 - j 0.5 9.0 - j 2.6 6.5 - j 3.5 4.5 - j 3.0 2.4 - j 1.0 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 65V 050-5997 Rev A 7-2001 ARF462A/B L4 C7 Bias 0 - 12V C8 R1 RF Input L2 L1 C2 C3 R2 C1 DUT L3 + 65V C6 RF Output C4 C5 C1 -- 2200 pF 50V NPO mounted at device gate lead. C2-C5 -- Arco 463 Mica trimmer C6-C8 -- 10nF 500V COG chip L1 -- 3t #20 AWG .312"ID ~74nH L2 -- 4t #18 AWG .25" ID .25L ~86 nH L3 -- 10t #20 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF462A/B 40.68 MHz Test Circuit 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) P E R 6.15 (.242) BSC 4.50 (.177) Max. 1.01 (.040) 1.40 (.055) IM L Top View 15.49 (.610) 16.26 (.640) A IN Y R TO-247 Package Outline 5.38 (.212) 6.20 (.244) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 050-5997 Rev A 7-2001 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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