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| MITSUBISHI SEMICONDUCTOR BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module Specification are subject to change without notice. DESCRIPTION BA01303 is a front-end module for triple band (EGSM900/DCS1800/PCS1900) handheld phone using InGaP HBT technology. OUTLINE DRAWING 1 5 FEATURES Low voltage operation Vc=3.5V High output power Po=33.0dBm(min.) @f=880 - 915MHz Po=30.0dBm(min.) @f=1710 - 1785MHz Po=30.0dBm(min.) @f=1850 - 1910MHz Single voltage operation Single power control terminal Band select switch Tx/Rx select switch Surface mount package 3 Stage amplifier 50ohms matched ESD capability >8kV (@ANT pin) GPRS class12 compatible 16 10 15 1.5(typ) 11 *}0.2 8.5 1.Vc(Vc12) 8.Vcont3 2.Vc(Vc3) 9.ANT 3.GND 10.Vcont2 4.Power Monitor 11.Vcont1 (DCS/PCS) 12.Power Monitor 5.Rx(EGSM) (EGSM) 6.Rx(DCS) 13.GND 7.Rx(PCS) 14.Vc(Vc3) APPLICATION Triple band(EGSM/DCS/PCS) handheld phone. Power monitor Vc3 (DCS/PCS) Vcont2 Vcont3 100pF 1000pF +1uF 1000pF +1uF 100pF Vc12 Rx Rx (DCS)(PCS) 100pF 100pF Pin (DCS/PCS) Vpc Vband Pin (EGSM) Coupler 1000pF Tx/Rx Select Switch Filter Diplexer 1000pF Band Select Switch Coupler Tx/Rx Select Switch 100pF 1000pF +1uF 1000pF +1uF 100pF ANT Filter Vc12 Vc3 Power Rx monitor Vcont1 (EGSM) (EGSM) Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them .Trouble with semiconductors may lead to personal injury ,fire or property damage . Remember to give due consideration to safety when making your circuit designs , with appropriate measures such as (i) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap . Jan./2004 (1/3) *}0.2 7.5 20 6 MITSUBISHI SEMICONDUCTOR BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) Symbol Vc Vpc Vband Pin Tc(op) Tstg Parameter Supply voltage Power control voltage External voltage for band select Input power Operating case temperature Storage temperature Ratings 7 3 3 10 -30 - +85 -40 - +100 Unit V V V dBm deg.C deg.C Note: Each maximum rating is guaranteed independently under pulse operation (duty cycle 4:8). ELECTRICAL CHARACTERISTICS (Ta=25deg.C) (Tx mode) Vc=3.5V, Po=33/30dBm, Pin=3dBm, Vcont(1/2)=2.6V, Vpc<2.6V, Duty cycle 2:8 Parameter Frequency range(Tx) Supply voltage Output power Efficiency Control voltage range Power control current Band select current Harmonics Symbol f Vc Po Eff Vpc Ipc Iband 2 - 14fo 2 - 7fo 2 - 6fo Ileak Pm Prx Iso1 Iso2 Np ts OSC f Vc=3.5V , Vpc=0.2 - 2.6V Load VSWR=10:1 (all phase) EGSM DCS PCS EGSM DCS PCS Vc=3.5V,Vpc=2.6V Pin=3dBm,Vcont=2.6V EGSM DCS/PCS EGSM DCS/PCS Condition EGSM DCS/PCS MIN 880 1710 3.1 33.0 30.0 38 30 0.2 18.5 12.5 Limits TYP 3.5 33.5 30.5 43 35 4.0 0.7 10 MAX 915 1910 4.5 2.6 5.5 1.2 -33 -33 -33 40 Unit MHz V dBm % V mA mA dBm Vband=2.6V EGSM DCS PCS Vc=4.5V,Vpc=0V No input power EGSM DCS/PCS Rx(EGSM) port Rx(DCS/PCS) port Vpc=0V,Vcont=2.6V Vpc=0V,Vcont=0V EGSM(@935MHz) DCS/PCS Leakage current Coupling value Isolation for Rx Isolation 1 Isolation 2 Rx noise power Switching time Stability Frequency range(Rx) uA 20.0 21.5 dBc 14.0 15.5 15 dBm 13 -38 dBm -50 dBm -82 dBm/ -75 100kH 2 usec No oscillation more than -36dBm 1.1 1.3 1.3 960 1880 1990 1.3 1.5 1.5 MHz Insertion loss (Rx) IL Vcont1,2,3=0V Vcont1,2,3=0V Vcont1,2=0V, Vcont3=2.6V 925 1805 1930 - dB Jan./2004 (2/3) MITSUBISHI SEMICONDUCTOR BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module OPERATION MODES AND CONTROL SIGNALS Mode EGSM_Tx DCS_Tx, PCS_Tx EGSM_Rx DCS_Rx PCS_Rx Apply voltage Low High Vband Low High Low Low Low 0 - 0.8V 2.1 - 2.6V Vcont1 High Low Low Low Low 0 - 0.8V 2.4 - 2.8V Vcont2 Low High Low Low Low 0 - 0.8V 2.4 - 2.8V Vcont3 Low Low Low Low High 0 - 0.8V 2.4 - 2.8V PACKAGE OUTLINE 1.5(typ) *}0.2 8.5 8.5 6.9 6.2 4.5 2.5 0.6 0.6 7.5 6.5 4.0 2.0 0.6 0.6 0.6 0.3 5.5 0.6 Unit : mm General tolerance : *}0.2 : Metal (AgPt) : Overglass Coplanarity : <100um (7.4) *}0.2 7.5 Jan./2004 (3/3) |
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