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| BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz. PACKAGE STYLE .380 4L STUD .112x45 A FEATURES: * Common Emitter * PG = 6.0 dB at 20 W/150 MHz * OmnigoldTM Metalization System B C E OC E B D H I J MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG JC 8.5 A 60 V 35 V 4.0 V 85 W -65 C to +200 C -65 C to +200 C 2.0 C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Ccb PG C VSWR IC = 50 mA IC = 20 mA IE = 5.0 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 28 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 60 4.0 2.0 UNITS V V V mA mA --pF dB % --- TC = 125 C IC = 500 mA f = 1.0 MHz POUT =20 W f = 150 MHz 6.0 65 30:1 5.0 O 10 --75 VCE = 13.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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