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| BAW78M Silicon Switching Diode Switching applications High breakdown voltage 4 5 3 2 1 VPW05980 Total power dissipation, TS Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance Type BAW78M Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GDs 1=A Pin Configuration Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Symbol VR VRM IF IFM IFS Ptot Tj Tstg 110 C Values 400 400 1 1 10 1 150 -65 ... 150 Unit V A Surge forward current, t = 1 s W C 40 K/W 1 Aug-21-2001 BAW78M Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 A IF = 2 A Reverse current VR = 400 V Reverse current VR = 400 V, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time trr , 1 s CD 10 pF Symbol min. V(BR) VF IR IR 400 Values typ. max. - Unit V - 1.6 2 1 50 A Test circuit for reverse recovery time D.U.T. F 2 Pulse generator: tp = 10s, D = 0.05, tr = 0.6ns, Ri = 50 IF = 200 mA, IR = 200 mA, RL = 100 measured at IR = 20mA Oscillograph EHN00019 Oscillograph: R = 50, tr = 0.35ns, C 1pF Aug-21-2001 BAW78M Forward current IF = f (TS ) 1200 mA 800 IF 600 400 200 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 2 K/W IFmax / IFDC - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Aug-21-2001 BAW78M Forward current IF = f (VF ) TA = 25C 10 1 BAS 78A...D EHB00047 Reverse current IR = f (TA) VR = 400V BAS 78A...D EHB00048 10 5 F A nA R 10 0 10 5 4 max 10 -1 10 5 3 typ 10 -2 10 2 5 10 -3 0 1 V VF 2 10 1 0 50 100 TA C 150 4 Aug-21-2001 |
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