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| BC237/238/239 BC237/238/239 Switching and Amplifier Applications * Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES VCEO VEBO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC237 : BC238/239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 150 0.62 85 250 3.5 8 2 10 4 4 6 15 15 800 0.2 0.6 0.83 1.05 0.7 V V V V V MHz MHz pF pF dB dB dB Typ. Max. Units V V V V nA nA BVEBO IE=1A, IC=0 ICES VCE=50V, VBE=0 VCE=30V, VBE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA, f=100MHz VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2K VCE=5V, IC=0.2mA RG=2K, f=30~15KHz hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF hFE Classification Classification hFE (c)2002 Fairchild Semiconductor Corporation A 120 ~ 220 B 180 ~ 460 C 380 ~ 800 Rev. A2, August 2002 BC237/238/239 Typical Characteristics 100 100 80 IB = 350A IB = 300A IB = 250A IB = 200A IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 400A VCE = 5V 10 60 40 IB = 150A IB = 100A 1 20 IB = 50A 0 0 2 4 6 8 10 12 14 16 18 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Transfer Characteristic VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 VCE = 5V 1000 IC = 10 IB hFE, DC CURRENT GAIN 1000 V BE(sat) 100 100 10 V CE(sat) 1 1 10 100 1000 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE f=1MHz IE = 0 10 VCE = 5V 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC237/238/239 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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