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| BCR15PN NPN/PNP Silicon Digital Transistor Array * Switching circuit, inverter, interface circuit, driver circuit * Two (galvanic) internal isolated NPN/PNP Transistors in one package * Built in bias resistor (R1=4.7k, R2=4.7k) Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 4 5 6 2 1 3 VPS05604 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07176 TR2 R1 Type Marking Pin Configuration Package BCR15PN Maximum Ratings Parameter WAs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value Unit Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature Thermal Resistance 50 50 10 15 100 250 150 -65 ... 150 V mA mW C Junction - soldering point1) RthJS 140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Apr-30-2004 BCR15PN Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb fT R1 R1/R 2 Vi(on) Vi(off) VCEsat h FE I EBO I CBO V(BR)CBO V(BR)CEO typ. max. Unit 50 50 20 0.8 1 3.2 0.9 4.7 1 100 1.61 0.3 1.5 2.5 6.2 1.1 V nA mA V k - - 140 3 - MHz pF 1) Pulse test: t < 300s; D < 2% 2 Apr-30-2004 BCR15PN NPN Type DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration) 10 3 - Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 2 10 2 mA hFE 10 1 IC 10 1 10 0 10 -1 -1 10 0 1 2 10 10 10 mA 10 3 10 0 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 3 mA Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration) 10 1 mA 10 2 10 0 IC 10 1 IC 10 10 0 -1 10 -1 0 10 10 1 V 10 2 10 -2 1 1.2 1.4 1.6 V 2 Vi(on) Vi(off) 3 Apr-30-2004 BCR15PN PNP Type DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration) 10 3 - Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 2 10 2 mA hFE 10 1 IC 10 1 10 0 10 -1 -1 10 0 1 10 10 mA 10 2 10 0 0 0.2 0.4 0.6 0.8 V 1.1 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 1 10 0 IC 10 0 IC 10 -1 10 -1 -1 10 10 0 10 1 V 10 2 10 -2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2 Vi(on) Vi(off) 4 Apr-30-2004 BCR15PN Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Apr-30-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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