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| BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDT60 Collector-base voltage (IE = 0) BDT60A BDT60B BDT60C BDT60 Collector-emitter voltage (IB = 0) BDT60A BDT60B BDT60C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.4 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 -0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDT60 V(BR)CEO IC = -30 mA IB = 0 (see Note 3) BDT60A BDT60B BDT60C VCE = -30 V ICEO Collector-emitter cut-off current VCE = -40 V VCE = -50 V VCE = -60 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -30 V VCB = -40 V VCB = -50 V VCB = -60 V IEBO hFE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = -5 V -3 V -6 mA -3 V -1.5 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IB = 0 -1.5 A -1.5 A -1.5 A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 -2.5 -2.5 -2.0 V V V TC = 150C TC = 150C TC = 150C TC = 150C BDT60 BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C MIN -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2.0 -2.0 -2.0 -2.0 -5 mA mA mA V TYP MAX UNIT NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.5 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = -2 A VBE(off) = 5 V IB(on) = -8 mA RL = 20 MIN IB(off) = 8 mA tp = 20 s, dc 2% TYP 1 4.5 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 20000 10000 hFE - Typical DC Current Gain TCS115AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 -1*5 TCS115AB TC = -40C TC = 25C TC = 100C -1*0 1000 -0*5 TC = -40C TC = 25C TC = 100C 0 -0*5 -1*0 IC - Collector Current - A -5*0 VCE = -3 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 IC - Collector Current - A -5*0 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS115AC -2*5 -2*0 -1*5 -1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 IC - Collector Current - A -5*0 Figure 3. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS115AB IC - Collector Current - A -1*0 -0*1 BDT60 BDT60A BDT60B BDT60C -0.01 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 60 Ptot - Maximum Power Dissipation - W TIS110AA 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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