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| DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES * High forward transfer admittance * Short channel transistor with high forward transfer admittance to input capacitance ratio * Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS * VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Fig.1 Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. handbook, halfpage handbook, halfpage BF908; BF908R 4 3 g2 g1 d 1 Top view 2 s,b MAM039 Simplified outline (SOT143) and symbol; BF908. d 4 g2 g1 3 PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION Top view 2 1 s,b MAM040 Fig.2 Simplified outline (SOT143R) and symbol; BF908R. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS - - - - 36 2.4 20 - MIN. - - - - 43 3.1 30 1.5 TYP. MAX. 12 40 200 150 50 4 45 2.5 UNIT V mA mW C mS pF pF dB 1996 Jul 30 2 Philips Semiconductors Product specification Dual-gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF908 BF908R Tstg Tj Note 1. Device mounted on a printed-circuit board. storage temperature operating junction temperature see Fig.3; note 1 up to Tamb = 50 C up to Tamb = 40 C - - -65 - CONDITIONS - - - - BF908; BF908R MIN. MAX. 12 40 10 10 200 200 +150 150 V UNIT mA mA mA mW mW C C handbook, halfpage 250 MRC275 P tot (mW) 200 BF908 150 BF908R 100 50 0 0 50 100 150 200 o Tamb ( C) Fig.3 Power derating curves. 1996 Jul 30 3 Philips Semiconductors Product specification Dual-gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL Rth j-a BF908 BF908R Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BF908; BF908R VALUE 500 550 UNIT K/W K/W MIN. 8 8 TYP. - - - - 15 - - MAX. 20 20 2 1.5 27 50 50 UNIT V V V V mA nA nA V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S IDSS IG1-SS IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate 1 cut-off current gate 2 cut-off current VG2-S = 4 V; VDS = 8 V; ID = 20 A - VG1-S = 4 V; VDS = 8 V; ID = 20 A - VG2-S = 4 V; VDS = 8 V; VG1-S = 0 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 5 V 3 - - DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 output capacitance reverse transfer capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 C; f = 1 MHz MIN. 36 2.4 1.2 1.2 20 - - TYP. 43 3.1 1.8 1.7 30 0.6 1.5 MAX. 50 4 2.5 2.2 45 1.2 2.5 UNIT mS pF pF pF fF dB dB 1996 Jul 30 4 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R handbook, halfpage 40 MRC281 MRC282 ID (mA) 30 VG2-S = 4 V 3V 2V handbook, halfpage 30 VG1-S = 0.3 V ID (mA) 0.2 V 20 20 1.5 V 1V 0.1 V 0V 0.5 V 10 10 -0.1 V -0.2 V 0V 0 -0.6 -0.4 -0.2 0 -0.3 V 0 4 8 12 VDS (V) 16 0 0.2 0.4 VG1-S (V) 0.6 VDS = 8 V; Tj = 25 C. VG2-S = 4 V; Tj = 25 C. Fig.4 Transfer characteristics; typical values. Fig.5 Output characteristics; typical values. 50 Yfs (mS) 40 MRC280 4V 3V 2V 1.5 V 60 Yfs (mS) MRC276 40 30 1V 20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 25 I D (mA) 40 0 40 80 120 160 T j (o C) VDS = 8 V; Tj = 25 C. VDS = 8 V; VG2-S = 4 V; ID = 15 mA. Fig.6 Forward transfer admittance as a function of drain current; typical values. Fig.7 Forward transfer admittance as a function of junction temperature; typical values. 1996 Jul 30 5 Philips Semiconductors Product specification Dual-gate MOS-FETs Table 1 f (MHz) Scattering parameters s11 MAGNITUDE (ratio) ANGLE (deg) s21 MAGNITUDE (ratio) ANGLE (deg) s12 MAGNITUDE (ratio) ANGLE (deg) BF908; BF908R s22 MAGNITUDE (ratio) ANGLE (deg) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C. 50 100 200 300 400 500 600 700 800 900 1000 0.998 0.994 0.979 0.962 0.939 0.914 0.892 0.865 0.837 0.811 0.785 -5.1 -10.4 -20.8 -30.3 -40.1 -49.1 -57.1 -64.4 -71.6 -78.1 -84.5 -5.3 -10.9 -21.6 -31.7 -41.7 -51.1 -59.1 -66.8 -73.9 -80.7 -87.0 3.537 3.502 3.450 3.318 3.234 3.093 2.912 2.774 2.616 2.479 3.329 173.5 167.7 154.9 143.7 131.9 120.7 111.1 101.0 91.4 81.9 72.5 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.003 98.2 88.8 74.6 69.5 65.6 64.4 63.1 65.2 70.8 87.4 108.0 0.996 0.994 0.987 0.983 0.980 0.974 0.969 0.966 0.965 0.965 0.966 -2.4 -4.9 -9.5 -13.9 -18.5 -22.8 -27.0 -31.2 -35.4 -39.4 -43.7 -2.4 -5.0 -9.7 -14.2 -18.8 -23.2 -27.4 -31.6 -35.9 -40.0 -44.2 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C. 50 100 200 300 400 500 600 700 800 900 1000 Table 2 0.998 0.994 0.976 0.957 0.934 0.907 0.885 0.851 0.826 0.797 0.773 Noise data f (MHz) Fmin (dB) opt (ratio) (deg) rn 3.983 3.943 3.878 3.722 3.614 3.446 3.240 3.072 2.891 2.733 2.569 173.4 167.5 154.7 143.3 131.6 120.4 110.9 100.9 91.3 81.9 72.8 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.004 95.5 93.6 74.3 70.0 63.5 62.2 59.6 64.8 67.8 85.0 102.9 0.994 0.991 0.984 0.979 0.975 0.969 0.964 0.961 0.959 0.958 0.958 VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C. 800 1.50 0.720 56.7 0.580 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C. 800 1.50 0.700 59.2 0.520 1996 Jul 30 6 Philips Semiconductors Product specification Dual-gate MOS-FETs PACKAGE OUTLINES BF908; BF908R handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.8 SOT143. handbook, full pagewidth 0.40 0.25 0.150 0.090 3 0.1 max 10 max o 3.0 2.8 1.9 4 B A 0.2 M A 10 max o 1.4 1.2 2.5 max 2 1.1 max 0.48 0.38 1.7 0.1 M B 1 0.88 0.78 30 max o MBC844 TOP VIEW Dimensions in mm. Fig.9 SOT143R. 1996 Jul 30 7 Philips Semiconductors Product specification Dual-gate MOS-FETs DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF908; BF908R This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 8 |
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