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| BF999 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications 3 Storage temperature Channel temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Channel - soldering point1) Total power dissipation, TS 76 C 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 Maximum Ratings Parameter LBs 1=G 2=D Symbol 3=S Value SOT23 Unit Drain-source voltage Drain current Gate-source peak current VDS ID IGSM Ptot Tstg Tch 20 30 10 200 -55 ... 150 150 V mA mA mW C Rthchs 370 K/W Nov-08-2002 BF999 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage ID = 10 A, - VGS = 4 V IGS = 10 mA, VDS = 0 VGS = 5 V, VDS = 0 Symbol min. V(BR)DS V(BR)GSS IGSS 20 6.5 5 - Values typ. max. 12 50 18 2.5 Unit V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 A AC characteristics Forward tranconductance VDS = 10 V, I D = 10 mA Gate input capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Power gain VDS = 10 V, I D = 10 mA, f = 200 MHz Noise figure VDS = 10 V, I D = 10 mA, f = 200 MHz F 1 Gp 25 dB Cdss 1 pF Cdg 25 fF Cgss 2.5 pF gfs 14 16 mS 2 Gate-source leakage current Gate-source breakdown voltage nA mA V IDSS - VGS (p) Nov-08-2002 BF999 Total power dissipation Ptot = f(TS) Output characteristics ID = f (VDS) 300 25 BF 999 EHT07308 mW D mA 20 VGS = 0.8 V 0.6 V 0.4 V P tot 200 15 150 0.2 V 0V -0.2 V 10 100 50 5 -0.4 V -0.6 V 0 0 20 40 60 80 100 120 C 150 0 0 5 10 15 V V DS 20 TS Gate transconductance gfs = f (VGS) Drain current ID = f (VGS) 20 g fs mS BF 999 EHT07309 30 BF 999 EHT07310 D mA 15 20 10 10 5 0 -1 0 1 2 V VGS 3 0 -1 0 1 V V GS 2 3 Nov-08-2002 BF999 Gate input capacitance Cgss = f (VGS ) Output capacitance C dss = f (V DS) 3 Cgss pF BF 999 EHT07311 2.0 Cdss pF BF 999 EHT07312 1.5 2 1.0 1 0.5 0 -2 -1 0 V VGS 1 0.0 0 5 10 V VDS 15 Reverse transfer capacitance Cdg = f (VDS) 200 Cdg fF BF 999 EHT07313 Gate input admittance y 11s (common-source) 14 b 11s mS 12 10 8 BF 999 f = 800 MHz EHT07314 700 MHz 150 600 MHz 500 MHz 100 6 4 200 MHz 400 MHz 300 MHz 50 2 100 MHz 50 MHz 0 0 5 10 V V DS 15 0 0 1 2 3 mS g11s 4 4 Nov-08-2002 BF999 Gate forward transfer admittance y21s (common-source) BF 999 EHT07315 Output admittance y 22s (common-source) 5 b 22s mS 4 600 MHz BF 999 EHT07316 f = 800 MHz 0 b 21s mS 50 MHz 100 MHz 700 MHz -5 200 MHz 3 300 MHz 500 MHz 400 MHz 400 MHz 2 300 MHz -10 600 MHz 700 MHz f = 800 MHz 500 MHz 200 MHz 1 100 MHz 50 MHz -15 4 6 8 10 12 14 mS 16 g 21s 0 0 0.1 0.2 0.3 0.4 mS 0.5 g 22s Test circuit for power gain and noise figure f = 200 MHz 1 nF 15 pF 15 pF 1 nF Input 60 Output 60 BB515 270 k 1 nF 270 k 270 k BB515 Dr 1 nF VG1S Vtun Vtun VDS EHM07024 5 Nov-08-2002 |
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