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BFG424W
NPN 25 GHz wideband transistor
Rev. 01 -- 21 March 2006 Product data sheet
1. Product profile
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
MSC895
1.2 Features
s s s s s Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance
1.3 Applications
s Radio Frequency (RF) front end wideband applications such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVison (SATV) tuners x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB)
1.4 Quick reference data
Table 1: Symbol VCBO VCEO IC Ptot Quick reference data Parameter collector-base voltage collector-emitter voltage collector current total power dissipation Tsp 103 C
[1]
Conditions open emitter open base
Min -
Typ 25 -
Max 10 4.5 30 135
Unit V V mA mW
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
Quick reference data ...continued Parameter DC current gain collector-base capacitance transition frequency maximum power gain noise figure Conditions IC = 25 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt
[2]
Table 1: Symbol hFE CCBS fT Gp(max) NF
Min 50 -
Typ 80 105 25 22 1.2
Max 120 -
Unit
fF GHz dB dB
[1] [2]
Tsp is the temperature at the soldering point of the emitter pins. Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG), see Figure 8.
2. Pinning information
Table 2: Pin 1 2 3 4 Pinning Description emitter base emitter collector
1, 3 2 1
mbb159
Simplified outline
3 4
Symbol
4 2
3. Ordering information
Table 3: Ordering information Package Name BFG424W Description plastic surface mounted package; reverse pinning; 4 leads Version SOT343R Type number
4. Marking
Table 4: BFG424W
[1] * = p: made in Hong Kong.
Marking Marking code [1] ND*
Type number
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
2 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature
Conditions open emitter open base open collector Tsp 103 C
[1]
Min -65 -
Max 10 4.5 1 30 135 +150 150
Unit V V V mA mW C C
Tsp is the temperature at the soldering point of the emitter pins.
6. Thermal characteristics
Table 6: Symbol Rth(j-sp)
[1]
Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Tsp 103 C
[1]
Typ 340
Unit K/W
Tsp is the temperature at the soldering point of the emitter pins.
200 Ptot (mW) 150
mgg681
100
50
0 0 40 80 120 Tsp (C) 160
Fig 1. Power derating curve
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
3 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
7. Characteristics
Table 7: Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage V(BR)EBO open-collector emitter-base breakdown voltage ICBO hFE CCES CEBS CCBS fT Gp(max) |s21|2 NF collector-base cut-off current DC current gain collector-emitter capacitance emitter-base capacitance collector-base capacitance Conditions IC = 2.5 A; IE = 0 mA IC = 1 mA; IB = 0 mA IE = 2.5 A; IC = 0 mA Min 10 4.5 1 Typ Max Unit V V V
IE = 0 mA; VCB = 4.5 V IC = 25 mA; VCE = 2 V VCB = 2 V; f = 1 MHz VEB = 0.5 V; f = 1 MHz VCB = 2 V; f = 1 MHz
50 [1]
80 385 515 105 25 22 18 0.8 1.2 12
15 120 -
nA
fF fF fF GHz dB dB dB dB dBm
transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C
-
insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C noise figure IC = 2 mA; VCE = 2 V; f = 900 MHz; S = opt IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt
PL(1dB)
output power at 1 dB gain compression
IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS = ZS(opt); ZL = ZL(opt)
[2]
-
IP3
[1] [2]
third-order intercept IC = 25 mA; VCE = 2 V; f = 2 GHz; point ZS = ZS(opt); ZL = ZL(opt)
[2]
-
22
-
dBm
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG, see Figure 8. ZS is optimized for noise; ZL is optimized for gain.
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
4 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
40 IC (mA) 30
001aad805
(1)
120 hFE
001aad806
(2) (3) (1) (2) (3)
80
(4)
20
(5) (6)
40
(7)
10
(8)
0 0 1 2 3 4 VCE (V) 5
0 0 10 20 30 IC (mA) 40
(1) IB = 400 A (2) IB = 350 A (3) IB = 300 A (4) IB = 250 A (5) IB = 200 A (6) IB = 150 A (7) IB = 100 A (8) IB = 50 A
(1) VCE = 3 V (2) VCE = 2 V (3) VCE = 1 V
Fig 2. Collector current as a function of collector-emitter voltage; typical values
200 CCBS (fF) 160
Fig 3. DC current gain as a function of collector current; typical values
001aad807
120
80
40
0 0 1 2 3 4 VCB (V) 5
f = 1 MHz
Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
5 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
30 fT (GHz) 20
001aad808
30 MSG G (dB) s21 2 20
001aad809
10
10
0 1 10 IC (mA)
102
0 1 10 IC (mA)
102
VCE = 2 V; f = 2 GHz; Tamb = 25 C
VCE = 2 V; f = 0.9 GHz; Tamb = 25 C
Fig 5. Transition frequency as a function of collector current; typical values
30 G (dB) 20 MSG s21 2
001aad810
Fig 6. Gain as a function of collector current; typical values
50 G (dB)
001aad811
Gp(max)
40 MSG 30
20 10 10
s21 2
Gp(max)
0 1 10 IC (mA)
102
0 10-1
1
10 f (GHz)
102
VCE = 2 V; f = 2 GHz; Tamb = 25 C
VCE = 2 V; IC = 25 mA; Tamb = 25 C
Fig 7. Gain as a function of collector current; typical values
Fig 8. Gain as a function of frequency; typical values
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
6 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
90 +1 135 +0.5 12 GHz +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 100 MHz -0.2 -5 5 10 0 0
+0.2
+5
-135
-0.5 -1 -90
-2
-45 1.0
001aad812
VCE = 2 V; IC = 25 mA; Zo = 50
Fig 9. Common emitter input reflection coefficient (s11); typical values
90
135
45
180
0.5
0.4
0.3
0.2
0.1
0 100 MHz
0
12 GHz
-135
-45
-90
001aad813
VCE = 2 V; IC = 25 mA
Fig 10. Common emitter reverse transmission coefficient (s12); typical values
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
7 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
90
135
45
100 MHz 180 50 40 30 20 10 0 12 GHz 0
-135
-45
-90
001aad814
VCE = 2 V; IC = 25 mA
Fig 11. Common emitter forward transmission coefficient (s21); typical values
90 +1 135 +0.5 12 GHz +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 10 0 0
+0.2
+5
100 MHz -0.2 -5
-135
-0.5 -1 -90
-2
-45 1.0
001aad815
VCE = 2 V; IC = 25 mA; Zo = 50
Fig 12. Common emitter output reflection coefficient (s22); typical values
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
8 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
7.1 Noise data
Table 8: Noise data VCE = 2 V; typical values. f (MHz) 900 IC (mA) 1 2 4 10 15 20 25 30 2000 1 2 4 10 15 20 25 30 NFmin (dB) 0.7 0.81 1 1.4 1.65 1.9 2.1 2.3 1.3 1.2 1.2 1.6 1.9 2.2 2.5 2.8 opt ratio 0.67 0.48 0.28 0.02 0.11 0.19 0.25 0.29 0.56 0.43 0.22 0.06 0.13 0.17 0.22 0.27 (deg) 19.1 17.8 11.7 -63.9 -162.4 -165.5 -166.3 -166.5 57.5 57.2 60.8 137.4 -162.1 -155.5 -152.2 -150.8 rn () 0.40 0.27 0.24 0.19 0.18 0.18 0.19 0.19 0.36 0.25 0.18 0.19 0.20 0.20 0.21 0.25
3 NFmin (dB) 2
(1)
001aad816
(2)
1
0 0 10 20 IC (mA) 30
(1) f = 2 GHz (2) f = 900 MHz
Fig 13. Minimum noise figure as a function of collector current; typical values
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
9 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21 06-03-16
Fig 14. Package outline SOT343R
BFG424W_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
10 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
9. Revision history
Table 9: Revision history Release date 20060321 Data sheet status Product data sheet Change notice Supersedes Document ID BFG424W_1
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
11 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
10. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BFG424W_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 21 March 2006
12 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Noise data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 21 March 2006 BFG424W_1
Published in The Netherlands

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