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| BPX 38 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 38 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1120 nm q Hohe Linearitat q Hermetisch dichte Metallbauform (TO-18) mit Basisanschlu, geeignet bis 125 C1) q Gruppiert lieferbar Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 450 nm to 1120 nm q High linearity q Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 C1) q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Typ Type BPX 38 BPX 38-2 BPX 38-3 BPX 38-4 BPX 1) 1) Bestellnummer Ordering Code Q62702-P15 Q62702-P15-S2 Q62702-P15-S3 Q62702-P15-S4 Q 62702-P15-S5 38-51) Eine Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden. Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor. Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield. In this case we will reserve us the right of delivering a substitute group. Semiconductor Group 217 10.95 fmo06018 BPX 38 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 125 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEB Ptot RthJA 50 50 200 7 220 450 V mA mA V mW K/W Semiconductor Group 218 BPX 38 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol S max Wert Value 880 450 ... 1120 Einheit Unit nm nm A LxB LxW H 0.675 1x1 2.05 ... 2.35 mm2 mm x mm mm 40 Grad deg. IPCB IPCB 1.8 5.5 A A CCE CCB CEB ICEO 23 39 47 20 ( 300) pF pF pF nA Semiconductor Group 219 BPX 38 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Symbol Symbol -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) Wert Value -3 -4 -5 Einh. Unit 0.2 ... 0.4 0.32 ... 0.63 0.5 ... 1.0 0.8 mA 0.95 1.5 2.3 3.6 mA 9 12 15 18 s tr, tf VCEsat 200 200 200 200 mV IPCE IPCB 170 280 420 650 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 220 BPX 38 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Output characteristics IC = f (VCE), IB = Parameter Output characteristics IC = f (VCE), IB = Parameter Dark current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Semiconductor Group 221 BPX 38 Collector-base capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-base capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional characteristics Srel = f () Semiconductor Group 222 |
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