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| Preliminary data BSO 612 CV SIPMOS (R) Small-Signal-Transistor Features * Dual N- and P -Channel * Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current N P -60 0.3 -2 V A VDS RDS(on) ID 60 0.12 3 Enhancement mode * Avalanche rated * dv/dt rated Type BSO 612 CV Package SO 8 Ordering Code Q67041-S4015 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol N Continuous drain current Value P Unit A ID 3 2.4 -2 -1.6 -8 T A = 25 C T A = 70 C Pulsed drain current I D puls EAS 12 T A = 25 C Avalanche energy, single pulse mJ 47 70 0.2 kV/s 6 6 20 2 V W C I D = 3 A, V DD = 25 V, R GS = 25 I D = -2 A, VDD = -25 V, R GS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 C EAR dv/dt 0.2 I S = 3 A, V DS = 48 V, di/dt = 200 A/s I S = -2 A, V DS = -48 V, di/dt = -200 A/s Gate source voltage Power dissipation VGS Ptot T j , T stg 20 2 T A = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 -55...+150 55/150/56 Page 1 1999-09-22 Preliminary data Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. N N P P N RthJS P Symbol min. BSO 612 CV Values typ. max. 40 40 110 62.5 70 62.5 Unit K/W RthJA Static Characteristics, at Tj = 25 C, unless otherwise specified Drain- source breakdown voltage V(BR)DSS N P 60 -60 3 -3 0.1 10 -0.1 -10 4 -4 V VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A Gate threshold voltage, VGS = VDS ID = 20 A VGS(th) N P 2.1 -2.1 ID = -450 A Zero gate voltage drain current IDSS N N P P 1 100 -1 -100 A VDS = 60 V, VGS = 0 V, Tj = 25 C VDS = 60 V, VGS = 0 V, Tj = 125 C VDS = -60 V, VGS = 0 V, Tj = 25 C VDS = -60 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS N P 10 -10 0.09 0.22 100 -100 nA VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) N P 0.12 0.3 VGS = 10 V, ID = 3 A VGS = -10 V , ID = -2 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-22 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Characteristics Transconductance Symbol min. BSO 612 CV Values typ. max. Unit gfs N P 2 1.2 4 2.4 275 320 90 105 50 40 12 15 35 60 25 145 30 95 - S VDS2 * I D * R DS(on)max, ID = 3 A VVDS2 * I D * R DS(on)max, ID = -2 A Input capacitance Ciss N P 340 400 115 130 65 50 pF VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance Coss N P - VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance Crss N P - VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time td(on) N P 18 23 55 90 40 220 45 140 ns VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 Rise time tr N P - VDD = 30 V, VGS = 10 V, ID = 3 A, R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A, RG = 27 Turn-off delay time td(off) N P - VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 Fall time tf N P - VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 Page 3 1999-09-22 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Characteristics Gate to source charge Symbol min. BSO 612 CV Values typ. max. Unit Qgs N P 1 2 5.5 4.5 10.3 10.5 5 -4 1.5 3 8.3 6.8 15.5 16 nC VDD = 48 V, ID = 3 A VDD = -48 V, ID = -2 A Gate to drain charge Qgd N P - VDD = 48 V, ID = 3 A VDD = -48 V, ID = -2 A Gate charge total Qg N P - VDD = 48 V, ID = 3 A, VGS = 0 to 10V VDD = -48 V, ID = -2 A, VGS = 0 to -10V Gate plateau voltage V(plateau) N P - V VDD = 48 V, ID = 3 A VDD = -48 V, ID = -2 A Reverse Diode Inverse diode continuous forward current N IS P N ISM P - 0.9 -0.9 55 55 90 65 3 -2 12 -8 A T A = 25 C Inverse diode direct current,pulsed T A = 25 C Inverse diode forward voltage VSD N P 1.2 -1.2 V VGS = 0 V, I F = I S VGS = 0 V, I F = I S Reverse recovery time trr N P 85 85 ns VR = 30 V, IF=l S, di F/dt = 100 A/s VR = -30 V, IF=l S , diF/dt = -100 A/s Reverse recovery charge Qrr N P 135 100 C VR = 30 V, IF=l S , diF/dt = 100 A/s VR = -30 V, I F=lS, diF/dt = -100 A/s Page 4 1999-09-22 Preliminary data Power Dissipation (N-Ch.) Power Dissipation (P-Ch.) BSO 612 CV Ptot = f (TA) BSO 612 CV Ptot = f (TA ) BSO 612 CV 2.2 2.2 W 1.8 1.6 W 1.8 1.6 Ptot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 Ptot C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 160 0.0 0 20 40 60 80 100 120 C 160 TA TA Drain current (N-Ch.) Drain current (P-Ch.) I D = f (T A) parameter: VGS 10 V BSO 612 CV ID = f (TA) parameter: VGS -10 V BSO 612 CV 3.2 -2.2 A A -1.8 2.4 -1.6 ID ID 2.0 -1.4 -1.2 1.6 -1.0 1.2 -0.8 -0.6 -0.4 0.4 -0.2 0.0 0 20 40 60 80 100 120 0.8 C 160 0.0 0 20 40 60 80 100 120 C 160 TA Page 5 TA 1999-09-22 Preliminary data Safe operating area (N-Ch.) BSO 612 CV Safe operating area (P-Ch.) I D = f ( VDS ) parameter : D = 0 , T A = 25 C 10 2 BSO 612 CV ID = f ( VDS ) parameter : D = 0 , TA = 25 C -10 1 BSO 612 CV tp = 200.0s ID ID RD 10 0 S( on ) -10 0 R = 100 s DS ( 10 1 VD S on ) /I D tp = 45.0s = V DS A /I A D 1 ms 1 ms 10 ms 10 ms -10 -1 10 -1 DC DC 10 -2 -1 10 -10 -2 -1 -10 10 0 10 1 V 10 2 -10 0 -10 1 V -10 2 VDS VDS Transient thermal impedance (N-Ch.) Transient thermal impedance (P-Ch.) Z thJC = f(t p) parameter : D = tp/T 10 2 ZthJC = f(tp) parameter : D = tp /T 10 2 BSO 612 CV BSO 612 CV K/W K/W 10 1 10 1 Z thJC 10 0 D = 0.50 0.20 single pulse 10 -1 0.10 0.05 0.02 0.01 Z thJC 10 0 D = 0.50 0.20 0.10 10 -1 single pulse 0.05 0.02 0.01 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 6 tp 1999-09-22 Preliminary data Typ. output characteristics (N-Ch.) BSO 612 CV Typ. output characteristics (P-Ch.) I D = f (VDS) parameter: tp = 80 s BSO 612 CV ID = f (VDS ) parameter: tp = 80 s BSO 612 CV 7.5 Ptot = 2.00W VGS [V] a 4.0 b 4.2 4.5 4.7 -5.0 A Ptot = 2.00W VGS [V] a -4.0 A i h f e 6.0 5.5 5.0 g -4.0 -3.5 c db c d e f -4.2 -4.5 -4.7 -5.0 -6.0 c d e ID ID 5.0 5.2 5.5 5.7 6.0 4.5 4.0 3.5 3.0 2.5 2.0 c d e f f g h i -3.0 -2.5 -2.0 -1.5 -1.0 b a 1.5 1.0 0.5 a b -0.5 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 -5.0 VDS VDS Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID) parameter: VGS BSO 612 CV RDS(on) = f (ID ) parameter: VGS BSO 612 CV 0.38 1.0 b c d e f g 0.32 0.8 a b c d RDS(on) RDS(on) h 0.28 0.24 0.20 0.16 0.12 i 0.7 0.6 0.5 0.4 0.3 0.2 e f 0.08 0.04 VGS [V] = b 4.2 c 4.5 d 4.7 e f 5.0 5.2 g 5.5 h i 5.7 6.0 0.1 VGS [V] = a b c d e f -4.0 -4.2 -4.5 -4.7 -5.0 -6.0 0.00 0.0 1.0 2.0 3.0 4.0 5.0 A 6.5 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 C -5.0 ID Page 7 Tj 1999-09-22 Preliminary data Typ. transfer characteristics (N-Ch.) parameter: tp = 80 s I D = f (VGS), V DS 2 x I D x R DS(on)max 10 BSO 612 CV Typ. transfer characteristics (P-Ch.) parameter: tp = 80 s ID = f (VGS ), VDS 2 x ID x RDS(on)max 5.0 A 8 7 A 4.0 3.5 ID 6 5 4 3 2 1 0 0 ID 1 2 3 4 5 7 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 VGS V 1.0 2.0 3.0 4.0 VGS V 6.0 Typ. forward transconductance (N-Ch.) Typ. forward transconductance (P-Ch.) gfs = f(ID); T j = 25 C parameter: g fs 7.0 gfs = f(ID); Tj = 25 C parameter: gfs 4.0 S S 6.0 5.5 5.0 3.0 gfs gfs 1 2 3 4 5 6 7 8 4.5 4.0 3.5 3.0 2.5 2.0 2.5 2.0 1.5 1.0 1.5 1.0 0.5 0.0 0 0.5 A 10 ID 0.0 0.0 -1.0 -2.0 -3.0 -4.0 A -6.0 ID Page 8 1999-09-22 Preliminary data Drain-source on-resistance (N-Ch.) BSO 612 CV Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) parameter : I D = 3 A , VGS = 10 V BSO 612 CV RDS(on) = f (Tj) parameter : ID = -2 A , VGS = -10 V BSO 612 CV 0.34 0.80 0.28 0.60 RDS(on) 0.24 RDS(on) 0.50 0.20 0.16 0.12 0.40 98% typ 0.30 98% typ 0.08 0.20 0.04 0.00 -60 0.10 -20 20 60 100 C 180 0.00 -60 -20 20 60 100 C 180 Tj Tj Gate threshold voltage (N-Ch.) Gate threshold voltage (P-Ch.) VGS(th) = f (T j) parameter: VGS = VDS, ID = 20 A 5.0 VGS(th) = f (Tj) parameter: VGS = VDS , ID = -450 A -5.0 V 4.0 98% V 98% -4.0 V GS(th) 3.5 3.0 2.5 2% typ V GS(th) -3.5 typ -3.0 -2.5 2% 2.0 1.5 1.0 0.5 0.0 -60 -2.0 -1.5 -1.0 -0.5 0.0 -60 -20 20 60 100 160 C Tj -20 20 60 100 160 C Tj Page 9 1999-09-22 Preliminary data Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.) BSO 612 CV C = f(VDS) parameter: VGS=0 V, f=1 MHz 10 3 C = f(VDS ) parameter: VGS =0 V, f=1 MHz 10 3 pF pF Ciss C C Ciss 10 2 Coss Crss 10 2 Coss Crss 10 1 0 5 10 15 20 25 VDS V 35 10 1 0 -5 -10 -15 -20 -25 VDS V -35 Forward characteristics of reverse diode Forward characteristics of reverse diode I F = f (VSD), (N-Ch.) parameter: Tj , tp = 80 s 10 1 IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 s -10 1 BSO 612 CV BSO 612 CV A A 10 0 -10 0 IF 10 -1 IF -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0.0 2.4 V -10 -2 0.0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) -2.4 V 0.4 0.8 1.2 1.6 2.0 3.0 -0.4 -0.8 -1.2 -1.6 -2.0 -3.0 VSD Page 10 VSD 1999-09-22 Preliminary data Avalanche Energy EAS = f (Tj) (N-Ch.) parameter: ID = 3 A, VDD = 25 V RGS = 25 50 BSO 612 CV Avalanche Energy EAS = f (Tj ) parameter: ID = -2 A, VDD = -25 V RGS = 25 80 mJ 40 mJ 60 35 E AS E AS 45 65 85 105 125 165 30 25 20 15 50 40 30 20 10 5 0 25 10 C 0 25 45 65 85 105 125 C 165 Tj Tj Typ. gate charge (N-Ch.) Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = 3 A BSO 612 CV VGS = f (QGate) parameter: ID = -2 A BSO 612 CV 16 -16 V V 12 -12 VGS 10 VGS 0,2 VDS max 0,8 VDS max -10 8 -8 0,2 VDS max 0,8 VDS max 6 -6 4 -4 2 -2 0 0 2 4 6 8 nC 12 0 0 2 4 6 8 10 12 14 16 nC 19 QGate Page 11 QGate 1999-09-22 Preliminary data Drain-source breakdown voltage BSO 612 CV Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) BSO 612 CV V(BR)DSS = f (Tj ), (P-Ch.) BSO 612 CV 72 -72 V V 68 66 64 62 60 58 56 54 -60 V(BR)DSS V(BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 -20 20 60 100 C 180 Tj Tj Page 12 1999-09-22 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. BSO 612 CV Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 1999-09-22 |
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