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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 1/4
BTD2150AT3
Features
* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA * Excellent current gain characteristics * Complementary to BTB1424AT3
Symbol
BTD2150AT3
Outline
TO-126
BBase CCollector EEmitter
ECB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature
Note : Pulse test, pulse width380s, duty cycle2%.
Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg
Limits 50 50 5 3 7 (Note) 1 10 150 -55~+150
Unit V V V A W C C
BTD2150AT3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 5 100 180 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 820 Unit V V V A A V V MHz pF
Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=100mA VCE=2V, IC=1A VCE=5V, IC=100mA, f =100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range R 180~390 S 270~560 T 390~820
Characteristic Curves
Grounded Emitter Output Characteristics
140 Collector Current---IC(mA) Collector Current---IC(mA) 120 100 80 60 40 20 0 0 1 2 3 4
IB=0uA 500uA 400uA 300uA 200uA 100uA
Grounded Emitter Output Characteristics
700 600 500 400 300 200 100 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V)
2.5mA 2mA 1.5mA 1mA 500uA IB=0uA
5
Collector To Emitter Voltage---VCE(V)
BTD2150AT3
CYStek Product Specification
CYStech Electronics Corp.
Grounded Emitter Output Characteristics
2500 Collector Current---IC(mA) 2000 1500 1000 500 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) 6
10mA 8mA 6mA 4mA 2mA IB=0mA
Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 3/4
Grounded Emitter Output Characteristics
3500 Collector Current---IC(mA) 3000 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V)
5mA IB=0mA 25mA 20mA 15mA 10mA
Current gain vs Collector current
1000 Saturation voltage---(mV) 1000
Saturation voltage vs Collector current
VCE(sat)
Current gain---HFE
VCE=5V
100
IC=40IB
100
VCE=2V VCE=1V
10
IC=10IB IC=20IB
10 1 10 100 1000 10000 Collector current---IC(mA)
1 1 10 100 1000 10000 Collector current---IC(mA)
Saturation votlage vs Collector current
10000 Power Dissipation---PD(W) Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
1.2 1 0.8 0.6 0.4 0.2 0
1000
100 1 10 100 1000 10000 Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTD2150AT3
CYStek Product Specification
CYStech Electronics Corp.
TO-126 Dimension
D A B 123 G C I
Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 4/4
E
J
K M
Marking:
3 4
D2150A
Style: Pin 1.Emitter 2.Collector 3.Base
F H L
1 2
3-Lead TO-126 Plastic Package CYStek Package Code: T3
*: Typical
DIM 1 2 3 4 A B C D E
Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413
Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05
DIM F G H I J K L M
Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520
Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2150AT3
CYStek Product Specification

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