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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 1/4 BTN8050SA3 Description The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull operation. * High collector current , IC = 700mA * Low VCE(sat) * Complementary to BTP8550SA3. Features Symbol BTN8050SA3 Outline TO-92 BBase CCollector EEmitter ECB Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg Limits 25 20 5 700 100 625 150 -55~+150 Unit V V V mA mA mW C C BTN8050SA3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. 25 20 6 100 150 Typ. 100 Max. 1 100 0.5 1 500 10 Unit V V V A nA V V MHz pF Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 2/4 Test Conditions IC=10A IC=1mA IE=10A VCB=20V VEB=5V IC=500mA, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=1V, IC=500mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE 1 Rank Range C 100~180 D 160~300 E 250~500 BTN8050SA3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE = 5V Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Current Gain---HFE 100 VCE(SAT) @ IC=20IB 100 VCE = 2V VCE = 1V 10 VCE(SAT) @ IC=10IB 10 1 10 100 Collector Current---IC(mA) 1000 1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT) @ IC=10IB On Voltage vs Collector Current 1000 On Voltage---(mV) VBE(ON) @ VCE=1V 1000 100 1 10 100 Collector Current---IC(mA) 1000 100 1 10 100 Collector Current---IC(mA) 1000 Power Derating Curve 700 Power Dissipation---PD(mW) 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA() BTN8050SA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension 2 Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 4/4 A B 1 2 3 Marking: 3 N8050S C D H I E F G 1 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050SA3 CYStek Product Specification |
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