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| BUL804 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED Figure 1: Package n APPLICATIONS n DEDICATED FOR PFC SOLUTION IN HALF-BRIDGE VOLTAGE FED TOPOLOGY ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING TO-220 1 2 3 n Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology. Table 1: Order Codes Part Number BUL804 Marking BUL804 Package TO-220 Packaging Tube July 2005 Rev. 1 1/7 BUL804 Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Storage Temperature Max. Operating Junction Temperature o Value 800 450 8 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W C C Table 3: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 oC/W oC/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES VEBO Parameter Collector Cut-off Current VCE = 800 V (VBE = -1.5 V) V = 800 V CE Test Conditions Tj = 125 oC Min. Typ. Max. 100 500 Unit A A V V Emitter-Base Voltage (IC = 0 ) IE = 10 mA IC = 100 mA L = 25 mH 8 450 VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) ICEO VCE(sat)* VBE(sat)* hFE Collector Cut-off Current VCE = 450 V (IB = 0) Collector-Emitter Saturation Voltage IC = 1 A IC = 2.5 A IB = 0.2 A IB = 0.5 A IB = 0.2 A IB = 0.5 A VCE = 5 V VCE = 5 V IC = 2 A IB2 = -0.4 A (see figure 11) IB1 = 0.4 A RBB = 0 W (see figure 10) 0.6 0.1 1.8 0.1 10 10 250 0.8 1.2 1.2 1.3 20 2.6 0.25 1 0.2 A V V V V Base-Emitter Saturation IC = 1 A Voltage IC = 2.5 A DC Current Gain RESISTIVE LOAD IC = 10 mA IC = 2 A VCC = 300 V IB1 = 0.4 A Tp = 30 s IC = 2 A VBE(off) = -5 V Vclamp = 360 V ts tf ts tf Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time s s s s * Pulsed: Pulsed duration = 300 s, duty cycle 1.5 %. 2/7 BUL804 Figure 3: DC Current Gain Figure 6: DC Current Gain Figure 4: Collector-Emitter Saturation Voltage Figure 7: Base-Emitter Saturation Voltage Figure 5: Inductive Load Switching Time Figure 8: Resistive Load Switching Time 3/7 BUL804 Figure 9: Reverse Biased Operating Area Figure 10: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 11: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 4/7 BUL804 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 5/7 BUL804 Table 5: Revision History Release Date 07-Jul-2005 Version 1 First Release. Change Designator 6/7 BUL804 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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