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| SIPMOS (R) Power Transistor BUZ 345 * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 345 100 V 41 A 0.045 TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 41 A TC = 28 C Pulsed drain current IDpuls 164 TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 41 18 mJ ID = 41 A, VDD = 25 V, RGS = 25 L = 249.9 H, Tj = 25 C Gate source voltage Power dissipation 280 VGS Ptot 20 150 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 C 0.83 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 345 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 3 4 A 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.04 0.045 VGS = 10 V, ID = 26 A Data Sheet 2 05.99 BUZ 345 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 10 20 - S VDS 2 * ID * RDS(on)max, ID = 26 A Input capacitance Ciss 1800 2700 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 560 840 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 270 400 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time 30 45 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time 110 165 td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time 300 390 tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 150 195 Data Sheet 3 05.99 BUZ 345 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 41 A TC = 25 C Inverse diode direct current,pulsed ISM 164 V 1.6 1.8 ns 120 C 0.6 - TC = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 82 A Reverse recovery time trr VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Data Sheet 4 05.99 BUZ 345 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 45 A 160 W Ptot ID 120 35 30 100 25 80 20 60 15 10 5 0 0 40 20 0 0 20 40 60 80 100 120 C 160 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 A K/W tp = 7.4s 10 s ID 10 2 / ZthJC 10 -1 I D V DS (o n) = DS 100 s R 1 ms D = 0.50 10 ms 0.20 10 -2 10 1 0.10 0.05 single pulse 0.02 0.01 10 0 0 10 DC 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 345 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 100 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.14 Ptot = 150W l kj i VGS [V] a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e f g 0.12 ID 80 70 60 50 40 30 20 RDS (on)0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 j h i hc d e f g fg h i e j k dl c 10 0 0 a 0.02 VGS [V] = b 1 2 3 4 5 6 7 8 V 10 0.01 0.00 0 a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 10 20 30 40 50 60 70 A 90 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max 50 A ID VDS2 x ID x RDS(on)max 24 S 20 gfs 40 35 18 16 30 25 20 15 14 12 10 8 6 10 4 5 0 0 2 1 2 3 4 5 6 7 8 V VGS 10 0 0 5 10 15 20 25 30 35 A ID 45 Data Sheet 6 05.99 BUZ 345 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 26 A, VGS = 10 V 0.14 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.12 98% RDS (on)0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 3 nF C A Ciss IF 10 2 10 0 Coss Crss 10 -1 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 345 Avalanche energy EAS = (Tj) parameter: ID = 41 A, VDD = 25 V RGS = 25 , L = 249.9 H 300 mJ 260 Typ. gate charge VGS = (QGate) parameter: ID puls = 62 A 16 V EAS 240 220 200 180 160 140 120 100 80 60 40 20 0 20 VGS 12 0,2 VDS max 10 0,8 VDS max 8 6 4 2 0 0 40 60 80 100 120 C 160 20 40 60 80 100 nC 130 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99 |
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