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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYX10G Rectifier
Product specification 1996 May 24
Philips Semiconductors
Product specification
Rectifier
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Available in ammo-pack. DESCRIPTION
BYX10G
Rugged glass package, using a high temperature alloyed construction.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VRWM IF(AV) PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN. - - -
MAX. 1600 1600 800 1.2 V V V A
UNIT
Ttp = 50 C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 60 C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4
-
-
0.6
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRWMmax see Fig.5
-
25
A
Tstg Tj
storage temperature junction temperature
-65 -65
+175 +175
C C
1996 May 24
2
Philips Semiconductors
Product specification
Rectifier
ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR trr Cd PARAMETER forward voltage reverse current CONDITIONS IF = 2 A; Tj = Tj max; see Fig.6 IF = 2 A; see Fig.6 VR = VRWMmax; see Fig.7 VR = VRWMmax; Tj = 150 C; see Fig.7 reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 MIN. - - - - - - TYP. - - - - 3 30
BYX10G
MAX. 1.5 1.5 1 200 - -
UNIT V V A A s pF
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.9. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 46 100 UNIT K/W K/W
1996 May 24
3
Philips Semiconductors
Product specification
Rectifier
GRAPHICAL DATA
MBG040
BYX10G
handbook, halfpage
1.6
handbook, halfpage
1.0
MBH392
IF(AV) (A) 1.2
IF(AV) (A)
0.8
0.6 0.8 0.4
0.4
0.2
0 0 40 80 120 160 200 Ttp (oC)
0 0 40 80 120 160 200 Tamb (C)
a = 1.57; VR = VRWMmax; = 0.5. Lead length 10 mm.
a = 1.57; VR = VRWMmax; = 0.5. Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGC737
handbook, halfpage
1.6
a = 3 2.5
2 1.57 1.42
handbook, halfpage
200
MBH393
P (W) 1.2 Tj (C)
0.8
100
0.4
0 0 0.2 0.4 0.6 0.8 1 IF(AV) (A)
0 0 400 800 VR (V) 1200
a = IF(RMS)/IF(AV); VR = VRWMmax; = 0.5.
Fig.4
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Solid line = VR. Dotted line = VRWM; = 0.5.
Fig.5
Maximum permissible junction temperature as a function of reverse voltage.
1996 May 24
4
Philips Semiconductors
Product specification
Rectifier
BYX10G
MBG049
handbook, halfpage I
6
F (A)
10 3 handbook, halfpage IR (A)
2
MGC738
5
4
10
3
2
10
1
0 0 1.5 VF (V) 3
1 0 40 80 120 160 200 Tj (oC)
Solid line: Tj = 25 C. Dotted line: Tj = 175 C.
VR = VRWMmax.
Fig.6
Forward current as a function of forward voltage; maximum values.
Fig.7
Reverse current as a function of junction temperature; maximum values.
10 2 handbook, halfpage
MBG030
handbook, halfpage
50 25
Cd (pF) 7 10 50
2 3 1 10 102 VR (V) 10
3
MGA200
1
f = 1 MHz; Tj = 25 C. Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 May 24
5
Philips Semiconductors
Product specification
Rectifier
BYX10G
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 May 24
6
Philips Semiconductors
Product specification
Rectifier
PACKAGE OUTLINE
handbook, full pagewidth
k
3.81 max
28 min
Dimensions in mm.
Fig.11 SOD57.
,
4.57 max
BYX10G
a
0.81 max
28 min
MBC880
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 May 24
7

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