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| SBD 20T10Q T y p e : C20T10Q-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.45g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 180 20 C20T10Q-11A 100 50 Hz Full Sine Wave Tc=120C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 10 A per arm Min. Typ. Max. 1 0.88 1.5 Unit mA V C /W Rth(j-c) Junction to Case C20T10Q-11A OUTLINE DRAWING (Dimentions in mm) |
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