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| SBD T y p e : C20T10Q 20T10Q OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 180 20 C20T10Q 100 50 Hz Full Sine Wave Tc=120C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 10 A per arm Min. Typ. Max. 1 0.88 1.5 Unit mA V C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C20T10Q/C20T10Q-11A (per Arm) 50 INSTANTANEOUS FORWARD CURRENT (A) 20 Tj=25C Tj=150C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C20T10Q/C20T10Q-11A (Total) RECT 180 SINE WAVE 20 AVERAGE FORWARD POWER DISSIPATION (W) 16 12 8 4 0 0 4 8 12 16 20 24 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 50 C20T10Q/C20T10Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 20 10 5 0 20 40 60 80 100 120 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C20T10Q/C20T10Q-11A (Total) 3.5 AVERAGE REVERSE POWER DISSIPATION (W) 3.0 RECT 180 2.5 2.0 SINE WAVE 1.5 1.0 0.5 0 0 20 40 60 80 100 120 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V R M= 100V C20T10Q/C20T10Q-11A (Total) RECT 180 24 AVERAGE FORWARD CURRENT (A) 20 SINE WAVE 16 12 8 4 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 200 C20T10Q/C20T10Q-11A SURGE FORWARD CURRENT (A) 160 120 80 40 I FSM 0.02s 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C20T10Q/C20T10Q-11A (per Arm) 500 JUNCTION CAPACITANCE (pF) 200 100 50 0.5 1 2 5 10 20 50 100 200 REVERSE VOLTAGE (V) |
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