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| BSM300GA170DN2 E3166 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Enlarged diode area * Package with insulated metal base plate * RG on,min = 5.6 Ohm Type BSM300GA170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package SINGLE SWITCH 1 Ordering Code C67070-A2710-A67 1700V 440A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 440 300 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 880 600 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 2500 W + 150 -55 ... + 150 0.05 0.1 4000 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jul-31-1996 BSM300GA170DN2 E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.6 2 8 6.2 3.9 5.3 V VGE = VCE, IC = 20 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 300 A, Tj = 25 C VGE = 15 V, IC = 300 A, Tj = 125 C Zero gate voltage collector current ICES 3 - mA VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 108 44 3.5 1 - S nF - VCE = 20 V, IC = 300 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-31-1996 BSM300GA170DN2 E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 600 1200 ns VCC = 1200 V, VGE = 15 V, IC = 300 A RGon = 5.6 Rise time tr 200 400 VCC = 1200 V, VGE = 15 V, IC = 300 A RGon = 5.6 Turn-off delay time td(off) 1280 1900 VCC = 1200 V, VGE = -15 V, IC = 300 A RGoff = 5.6 Fall time tf 110 160 VCC = 1200 V, VGE = -15 V, IC = 300 A RGoff = 5.6 Free-Wheel Diode Diode forward voltage VF 2 1.8 2.5 - V IF = 300 A, VGE = 0 V, Tj = 25 C IF = 300 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 1 - s IF = 300 A, VR = -1200 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 300 A, VR = -1200 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C Tj = 125 C 28 100 - Semiconductor Group 3 Jul-31-1996 BSM300GA170DN2 E3166 Power dissipation Ptot = (TC) parameter: Tj 150 C 2600 W 2200 Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 4 A Ptot 2000 1800 1600 1400 1200 1000 800 IC 10 3 tp = 1.2s 10 s 10 2 100 s 1 ms 10 1 600 10 ms 400 200 0 0 20 40 60 80 100 120 C 160 10 0 0 10 DC 10 1 10 2 10 3 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 450 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT K/W IC 350 300 250 ZthJC 10 -1 10 -2 200 150 10 -3 100 single pulse 50 0 0 10 -4 -5 10 D = 0.50 0.20 0.10 0.05 0.02 0.01 20 40 60 80 100 120 C 160 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Jul-31-1996 BSM300GA170DN2 E3166 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 600 A 500 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 600 A 500 17V 15V 13V 11V 9V 7V IC 450 400 350 300 250 200 150 100 50 0 0.0 IC 450 400 350 300 250 200 150 100 50 1.0 2.0 3.0 4.0 V 6.0 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 1200 A 1000 IC 900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-31-1996 BSM300GA170DN2 E3166 Typ. gate charge VGE = (QGate) parameter: IC puls = 300 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 nF Ciss VGE 16 14 12 10 8 C 800 V 1200 V 10 1 Coss 10 0 6 4 2 0 0.0 10 -1 0 Crss 0.5 1.0 1.5 2.0 2.5 3.0 3.5 C 4.5 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 250 500 750 1000 1250 1500 V 2000 VCE 0 0 250 500 750 1000 1250 1500 V 2000 VCE Semiconductor Group 6 Jul-31-1996 BSM300GA170DN2 E3166 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 5.6 10 4 t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 300 A 10 4 ns t tdoff 10 3 tdon tr t ns tdoff 10 3 tdon tr 10 2 tf 10 2 tf 10 1 0 100 200 300 400 500 A IC 700 10 1 0 5 10 15 20 30 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 5.6 1000 mWs E 800 Eon 700 600 500 400 300 200 100 0 0 Eoff E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 300 A 1000 mWs E 800 700 600 500 400 300 200 Eoff 100 0 0 Eon 100 200 300 400 500 A IC 700 5 10 15 20 30 RG Semiconductor Group 7 Jul-31-1996 BSM300GA170DN2 E3166 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 600 A 500 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W Diode Tj=125C IF Tj=25C 450 400 ZthJC 10 -1 10 -2 350 300 250 200 150 10 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -5 -5 10 10 -4 -4 D = 0.50 10 -3 0.20 0.10 0.05 0.02 single pulse 0.01 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 8 Jul-31-1996 BSM300GA170DN2 E3166 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Jul-31-1996 |
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