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PRELIMINARY
CGH3505F
5 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree's CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a flange package.
Package Type : 440166 PN: CGH3501 5F
Typical Performance 3.4-3.9GHz
(TC = 25C)
Parameter Gain @ POUT = 2 W POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss
3.4 GHz 11.6 33.0 23.0 4.0
3.5 GHz 11.8 33.0 23.0 4.5
3.6 GHz 12.0 33.0 24.0 6.0
3.8 GHz 11.8 33.5 18.0 13.0
3.9 GHz 11.2 33.5 17.0 9.0
Units dB dBm % dB
Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
* * * * *
ch 2007 Rev .6 - Mar
3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W POUT 15 W Typical P3dB WiMAX Fixed Access 802.16-2004 OFDM
*
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case 1
Symbol VDSS VGS TSTG TJ RJC
Rating 84 -10, +2 -55, +150 175 5.0
Units Volts Volts C C C/W
Note: 1 Measured for the CGH35015F at PDISS = 14W.
Electrical Characteristics (TC = 25C)
Characteristics DC Characteristics Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Case Operating Temperature Screw Torque RF Characteristics Small Signal Gain Drain Efficiency1 Back-Off Error Vector Magnitude Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD - - - 5.00 1.32 0.43 - - - pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz
2,3
Symbol
Min.
Typ.
Max.
Units
Conditions
VGS(th) VGS(Q) IDS V(BR)DSS TC T
-3.0 - 2.4 84 -10 -
-2.5 -2.4 2.7 100 - -
-1.8 - - - +105 60
VDC VDC A VDC C in-oz
VDS = 10 V, ID = 3.6 mA VDS = 28 V, ID = 60 mA VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 3.6 mA
Reference 440166 Package Revision 3
(TC = 25C, F0 = 3.5 GHz unless otherwise noted) GSS
11 22 - - -
12 24 2.5 2.0 10 : 1
- -
dB % % % Y
VDD = 28 V, IDQ = 60 mA VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W VDD = 28 V, IDQ = 60 mA, PAVE = 18 dBm VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W No damage at all phase angles, VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
EVM1 EVM2 VSWR
Notes: 1 Drain Efficiency = POUT / PDC 2 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH35015F-TB test fixture.
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
2
CGH3505F Rev .6 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical WiMAX Performance
Modeled vs Measured Performance of CGH35015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz
15 13 11 Small Signal Gain (dB) 9 7 5 3 1 -1 -3 -5 -7 -9
Simulated & Measured WiMax Amplifier S21 & S11
8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 Return Loss (dB)
Drain Efficiency
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
DB(|S(1,1)|) (R) Simulated DB(|S(2,1)|) (L) Simulated DB(|S(2,1)|) (L) Measured DB(|S(1,1)|) (R) Measured
2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 Frequency (GHz)
Single Tone CW Gain and Efficiency of CGH35015F vs. Output Power in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, Freq = 3.6 GHz
CGH35015 Gain & Efficiency vs. CW Pout
14
60%
12
50%
10
Gain (dB)
Gain Efficiency
40%
8
30%
6
20%
4
10%
2 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43
0%
CW Pout (dBm)
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
3
CGH3505F Rev .6 Preliminary
Typical WiMAX Performance
Typical EVM and Efficiency of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz F=3.6 GHz, 802.6-2004 OFDM, P/A=9.8 dB WiMax EVM & Eff. vs. Pout at 3.6GHz
4.0 3.5 3.0 2.5 40 35 30 25 20 15 10 5 0 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
EVM(3.6) Eff(3.6)
2.0 1.5 1.0 0.5 0.0
Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Average Power Out (dBm)
Typical Constellation Chart, Spectral Mask, and EVM of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
Efficiency (%)
EVM (%)
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
4
CGH3505F Rev .6 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical WiMAX Performance
Typical EVM and Efficiency at 22dBm and 33 dBm vs Frequency of CGH35015F in Broadband Amplifier Circuit
WiMAX Efficiency and EVM at 33 and 22 dBm vs. Frequency
3.5 28
3.0
24
2.5
20
EVM (%)
2.0
16
1.5
12
1.0
EVM (33dBm) EVM (22dBm) Efficiency (33dBm)
8
0.5
4
0.0 3.3 3.4 3.5 3.6 3.7 3.8 3.9
0
Frequency (GHz)
Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Efficiency (%)
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
5
CGH3505F Rev .6 Preliminary
CGH3505F-TB Demonstration Amplifier Circuit
CGH3505F-TB Demonstration Amplifier Circuit Outline
3-000522 REV 4
CGH35015-TB
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
6
CGH3505F Rev .6 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
CGH3505F-TB Demonstration Amplifier Circuit Schematic
CGH3505F-TB Demonstration Amplifier Circuit Bill of Materials
Designator C1 C2 C10,C11 C4 C5,C13 C14 C6 C7,C15 C8 C16 C17 R1,R2 R3 R4 J1 J2 J3,J4 Q1
Description CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF5%, 0603, ATC 600S CAP, 100 PF5%, 0603, ATC 600S CAP, 470 PF 10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (240096) CAP, 1.0UF 10%, 100V, 1210, X7R CAP, 33UF, 100V, ELECT, FK, SMD RES, 1/16W, 0603, 0 Ohms, 1% RES, 1/16W, 0603, 47 Ohms 5% RES, 1/16W, 0603, 100 Ohms 5% 5-PIN, MOLEX, MALE, CONNECTOR 2-PIN, MOLEX, MALE, CONNECTOR SMA, FEMALE, CONNECTOR CGH35015
Qty 1 1 2 1 2 1 1 2 1 1 1 2 1 1 1 1 2 1
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
7
CGH3505F Rev .6 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Product Dimensions CGH35015F (Package Type -- 440166)
PRELIMINARY
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
8
CGH3505F Rev .6 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
9
CGH3505F Rev .6 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless

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