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| MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H q IC................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 570.25 190 171 570.25 570.25 6 - M8 NUTS C C C C G E C C C 20 CM C E E E 124 0.25 140 E E E 40 CIRCUIT DIAGRAM E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - 7MOUNTING HOLES 38 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 5 LABEL 29.5 28 MITSUBISHI HVIGBT MODULES CM1200HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Ratings 3300 20 1200 2400 1200 2400 15600 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 1200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 1200A, VGE = 15V VCC = 1650V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 180 18.0 5.4 8.6 -- -- -- -- 2.80 -- 400 -- -- 0.006 Max 15 7.5 0.5 4.94 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.64 1.40 -- 0.008 0.016 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage IGES Gate-leakage current Collector-emitter VCE(sat) saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance (Note 4) (Note 1) Note 1. 2. 3. 4. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM1200HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 25C VGE = 13V VGE = 12V VGE = 11V VGE = 10V 2400 VGE = 14V VGE = 15V 1600 1200 800 400 0 VGE = 9V VGE = 20V TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V 2000 1600 1200 800 400 0 COLLECTOR CURRENT IC (A) 2000 VGE = 8V VGE = 7V 0 2 4 6 8 10 COLLECTOR CURRENT IC (A) Tj = 25C Tj = 125C 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE = 15V 6 10 Tj = 25C 8 IC = 2400A 6 IC = 1200A 4 4 2 Tj = 25C Tj = 125C 0 400 800 1200 1600 2000 2400 2 IC = 480A 0 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj = 25C CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 103 7 5 3 2 102 7 5 3 2 Cies 1 2 3 4 5 Coes 101 7 5 Cres 3 VGE = 0V, Tj = 25C 2 Cies, Coes : f = 100kHz : f = 1MHz Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM1200HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 3 2 100 7 5 3 2 10-1 7 5 REVERSE RECOVERY TIME trr (s) td(off) td(on) tr tf 101 7 5 3 2 100 7 5 trr 5 7 102 23 5 7 103 23 5 103 7 5 3 2 102 7 5 VCC = 1650V, VGE = 15V RG = 1.6, Tj = 125C Inductive load 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.016C/W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.008C/W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1650V IC = 1200A 16 12 8 4 0 0 5000 10000 15000 20000 GATE CHARGE QG (nC) Feb. 2000 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIMES (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 1.6 2 Irr |
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