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| CM150DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 150 Amperes/1200 Volts TC MEASURING POINT A D T (4 TYP.) F G2 BE CM E2 H U J H C2E1 E2 C1 E1 G1 V Q S - NUTS (3 TYP) K K Q P N G K R M C L G2 E2 RTC C2E1 E2 RTC E1 G1 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-24F is a 1200V (VCES), 150 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 150 VCES Volts (x 50) 24 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions L M N P Q R S T U V Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26Dia. 0.02 0.62 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.5 15.85 1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 1.880.01 0.67 0.16 0.24 0.59 0.55 93.00.25 48.00.25 17.0 4.0 6.0 15.0 14.0 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24F Trench Gate Design Dual IGBTMODTM 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM150DU-24F -40 to 150 -40 to 125 1200 20 150 300* 150 300* 600 40 40 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25C IC = 150A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. Typ. - - 5 - - - - Max. - - 6 1.8 1.9 1650 - Units 1 20 7 2.4 - - 3.2 mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24F Trench Gate Design Dual IGBTMODTM 150 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1 , Inductive Load Switching Operation IE = 150A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 6.0 Max. 59 2.6 1.5 150 80 450 300 150 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied - 0.020 - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. - Typ. Max. 0.21 Units C/W C/W C/W - - 0.24 - 0.11 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24F Trench Gate Design Dual IGBTMODTM 150 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT, IC, (AMPERES) 250 200 150 VGE = 20V 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 11 15 10 9.5 3 VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C 4 3 IC = 300A 2 8.5 2 1 IC = 150A IC = 60A 100 50 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1 8 0 0 50 100 150 200 250 300 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Cies 103 tf td(off) 101 SWITCHING TIME, (ns) 102 td(on) 102 tr 100 Coes Cres VGE = 0V 101 VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Inductive Load 101 0 1.0 2.0 3.0 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 103 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 600V VGE = 15V RG = 2.1 Tj = 25C Inductive Load Irr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 10-3 10-2 10-1 100 101 IC = 150A 16 VCC = 400V 100 Per Unit Base Rth(j-c) = 0.21C/W (IGBT) Rth(j-c) = 0.24C/W (FWDi) Single Pulse TC = 25C 12 8 4 VCC = 600V 102 trr 102 10-1 10-1 10-2 10-2 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 500 1000 1500 2000 2500 GATE CHARGE, QG, (nC) 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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