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| CM900HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMODTM HVIGBT 900 Amperes/4500 Volts L S A D L L V NUTS (6 TYP) P F CM C C C E E E E B Q C E G R U NUTS (3 TYP) K N N T H J W (8 TYP) X C Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking C C C C G E E E E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 7.48 5.51 1.50 6.73 4.880.01 1.57 0.79 0.80 1.62 3.13 2.240.01 Millimeters 190.0 140.0 38.0 171.0 124.00.25 40.0 20.0 20.25 41.25 79.4 57.00.25 Dimensions M N P Q R S T U V W X Inches 0.51 2.42 0.59 1.57 0.20 1.16 1.10 M4 Metric M8 Metric 0.28 Dia. 0.20 Millimeters 13.0 61.5 15.0 40.0 5.2 29.5 28.0 M4 M8 Dia. 7.0 5.0 Applications: Traction Medium Voltage Drives High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM900HB-90H is a 4500V (VCES), 900 Ampere Single IGBTMODTM Power Module. Type CM Current Rating Amperes 900 VCES Volts (x 50) 90 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900HB-90H Single IGBTMODTM HVIGBT 900 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V) Gate-Emitter Voltage (VCE = 0V) Collector Current (Tc = 25C) Peak Collector Current (Pulse) Diode Forward Current** (Tc = 25C) Diode Forward Surge Current** (Pulse) Maximum Collector Dissipation (Tc = 25C, IGBT Part, Tj 125C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 Auxiliary Terminal Screws Module Weight (Typical) V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM PC - - - - Viso CM900HB-90H -40 to 150 -40 to 125 4500 20 900 1800* 900 1800* 10000 115 53 17 2.2 6000 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb kg Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 90mA, VCE = 10V IC = 900A, VGE = 15V, Tj = 25C IC = 900A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 2250V, IC = 900A, VGE = 15V IE = 900A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 3.0 3.3 7.5 4.0 Max. 18.0 0.5 7.5 3.9* - - 5.2 Units mA A Volts Volts Volts C Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900HB-90H Single IGBTMODTM HVIGBT 900 Amperes/4500 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 2250V, IC = 900A, VGE1 = VGE2 = 15V, RG = 10 Resistive Load Switching Operation IE = 900A, diE/dt = -1800A/s IE = 900A, diE/dt = -1800A/s VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. 162 12.0 3.6 - - - - - 360* Max. - - - 2.4 2.4 6.0 1.2 1.8 - Units nF nF nF s s s s Diode Reverse Recovery Time** Diode Reverse Recovery Charge** s C * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Case to Fin Symbol Rth(j-c) Q Rth(j-c) D Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.007 Max. 0.010 0.020 - Units K/W K/W K/W 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900HB-90H Single IGBTMODTM HVIGBT 900 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 6 VGE =Tj = 25C 15V Tj = 125C 1.2 1.0 0.8 0.6 0.4 0.2 0 10-3 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.010 K/W COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 4 3 2 1 0 0 5 4 3 2 1 0 Tj = 25C Tj = 125C 500 1000 1500 2000 0 500 1000 1500 2000 10-2 TIME, (s) 10-1 100 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.2 TURN-ON SWITCHING ENERGY, Eon, (J/P) 7 6 5 4 3 2 1 0 0 400 800 1200 1600 COLLECTOR CURRENT, IC, (AMPERES) 5 TURN-OFF SWITCHING ENERGY, Eoff, (J/P) 1.0 0.8 0.6 0.4 0.2 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.020 K/W VCC = 2250V VGE = 15V RG = 10 LS = 180nH Tj = 125C Inductive Load Integrated Over Range Of 10% 4 3 VCC = 2250V VGE = 15V RG = 10 LS = 180nH Tj = 125C Inductive Load Integrated Over Range of 10% 2 1 0 10-3 10-2 TIME, (s) 10-1 100 0 0 400 800 1200 1600 COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TURN-ON SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 1.2 REVERSE RECOVERY ENERGY, Erec, (J/P) 2500 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 2000 1.0 0.8 0.6 0.4 0.2 0 0 400 800 1200 1600 EMITTER CURRENT, IE, (AMPERES) 2000 1500 1500 VCC = 2250V VGE = 15V RG = 10 LS = 180nH Tj = 125C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions 1000 1000 VCC = 3000V VGE = 15V RG = 10 LS = 100nH Tj = 125C 500 500 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 4 |
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