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| CMFSH-3I DUAL, ISOLATED SILICON SCHOTTKY DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3I consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is designed fast switching applications requiring a low forward voltage drop. MARKING CODE: C3I SOT-143 CASE MAXIMUM RATINGS: (TA=25 C) SYMBOL Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg JA -65 to +150 357 C C/W VRRM IF IFRM IFSM PD 30 100 200 750 350 UNITS V mA mA mA mW SYMBOL IR IR BVR VF VF VF CT trr ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25 C unless otherwise noted) TEST CONDITIONS MIN TYP MAX VR=25V VR=25V, TA=100 C IR=100A IF=2.0mA IF=15mA IF=100mA VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100 30 0.29 0.40 0.74 7.0 5.0 0.33 0.45 1.00 90 25 500 100 UNITS nA A V V V V pF ns R3 (3-December 2003) Central TM Semiconductor Corp. CMFSH-3I DUAL, ISOLATED SILICON SCHOTTKY DIODES SOT-143 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: C3I R3 (3-December 2003) |
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