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| CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION Buck Converter High Side Switch Other Applications VDSS 30V RDS(ON) Typ. 6.6m ID 71A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current Continuous Tc = 25, VGS@10V (Note 2) Continuous Tc = 100, VGS@10V (Note 2) Pulsed Tc = 25, VGS@10V (Note 3) Gate-to-Source Voltage Continue Total Power Dissipation Derating Factor above 25 Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds dv/dt TJ, TSTG EAS TL TPKG Symbol VDSS ID ID IDM VGS PD Value 30 71 45 284 20 66 0.53 3.0 -55 to 150 TBD 300 260 V W W/ V/ns mJ Unit V A THERMAL RESISTANCE Symbol RJC RJA RJA Parameter Junction-to-case Junction-to-ambient (PCB Mount) Junction-to-ambient Min Typ Max 1.9 50 62 Units /W /W /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150 Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air 2004/04/13 Champion Microelectronic Corporation Page 1 CMT70N03 N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT70N03 Package TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT70N03 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Breakdown Voltage Temperature Coefficient, (Reference to 25, ID = 1mA) Drain-to-Source Leakage Current (VDS = 30 V, VGS = 0 V, TJ = 25) (VDS = 24 V, VGS = 0 V, TJ = 125) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage, (VDS = VGS, ID = 250 A) Static Drain-to-Source On-Resistance, (VGS = 10 V, ID = 15A) (VGS = 4.5 V, ID = 12A) Forward Transconductance (VDS = 20V, ID = 12A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Total Gate Charge (VGS = 4.5 V) Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode ) Pulse Source Current (Body Diode) Forward On-Voltage Forward Turn-On Time Reverse Recovery Charge (IS = 12 A, VGS = 0 V) (IF = 12 A, VGS = 0 V, di/dt = 100A/s) (Note 5) Integral pn-diode in MOSFET(Note 2) ISM VSD trr Qrr 30 40 284 1.0 A V ns nC (VDS = 15 V, ID = 12 A) (Note5, 6) (Note 5) Dynamic Characteristics (VDS = 15 V, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss Qg Qg Qgs Qgd Resistive Switching Characteristics (VDD = 15 V, ID = 15 A, VGS = 10 V, RG = TBD) (Note 5,6) td(on) tr td(off) tf IS TBD TBD TBD TBD 71 ns ns ns ns A 2600 480 230 50 25 7.5 8.5 pF pF pF nC nC nC nC gFS (Note 5) RDS(on) 6.6 12 30 S 8.0 m VGS(th) 1.0 3.0 V IGSS -100 nA IGSS IDSS 1 10 100 nA A VDSS/TJ 0.05 V/ VDSS 30 V Symbol Min Typ Max Units Source-Drain Diode Characteristics 2004/04/13 Champion Microelectronic Corporation Page 2 CMT70N03 N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25 to 150 Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt <200A/s, VDD TO-252 B R C E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE V 4 1 2 3 K S A U L G J H D 2004/04/13 Champion Microelectronic Corporation Page 3 CMT70N03 N-CHANNEL Logic Level Power MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2004/04/13 Champion Microelectronic Corporation Page 4 |
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