View CNB1009_1227672.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Reflective Photosensors (Photo Reflectors)
CNB1009
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device.
9.50.3 6.50.3 4.00.2 12.00.3 (4.0)
LED
Unit : mm
2-o2.3
T.R
1.0 7.40.2 1.0
(1.0) 19.00.3 2-9.50.2
1.0
o2.2
Features
Fast response : tr, tf = 6 s (typ.) Small size, light weight
(2.54)
2
Detection of paper, film and cloth Detection of coin and bill
Optical mark reading
Detection of position and edge
1
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 50 75 20 5 30 100 -25 to +85 Unit V mA mW V V mA mW C C
(Note) ( ) Dimension is reference
*1
Tstg -30 to +100
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.34 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Input Reverse current (DC) characteristics Capacitance between pins Output characteristics Collector cutoff current Collector to emitter capacitance Collector current Transfer characteristics Response time
*1
Symbol VF IR Ct ICEO CC IC*1 IF = 50mA VR = 3V
Conditions
min
Forward voltage (DC)
VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f= 1MHz VCC = 10V, IF = 20mA, RL = 100 100
tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 100
*2
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
Transfer characteristics measurement circuit (Ambient light is shut off completely)
IC VCC
IF
*3
,, , ,, ,, ,
,, ,,
d = 5 mm
Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector 90% 10% current to decrease from 90% to 10% of its initial value.
tr tf
RL
,,
Standard white paper (Reflective ratio 90%)
, ,,
3 4 1 23 4 Pin connection
Applications
2.5 min.
(15.5)
typ 1.2 50
max 1.5 10 0.2
Unit V A pF A pF A s
5 500 6 0.3
V
1
Reflective Photosensors (Photo Reflectors)
CNB1009
IF , IC -- Ta
60 60
IF -- VF
1.6 Ta = 25C
VF -- Ta
IF , IC (mA)
50
IF
50
IF (mA)
Forward current, collector current
40 IC
40
VF (V)
1.2
IF = 50mA 10mA
Forward current
Forward voltage
30
30
0.8
1mA
20
20
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
10 2 VCC = 5V Ta = 25C RL = 100 10 2
IC -- VCE
160 Ta = 25C
IC -- Ta
VCC = 10V IF = 20mA RL = 100 120
IC (mA)
10
IC (mA)
10
IF = 30mA 1 20mA 10mA
1
Relative output current
10 2
Collector current
Collector current
IC (%)
80
10 -1
10 -1
40
10 -2 10 -1
1
10
10 2
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 VCE = 10V 10 3
tr -- IC
VCC = 10V Ta = 25C 800
IC -- d
VCC = 10V Ta = 25C RL = 100 IF = 20mA
ICEO (A)
1
10 2
IC (A)
600
tr (s)
Dark current
Rise time
10
-1
Collector current
10
500 100
400
10 -2
1
200
10 -3 - 40 - 20
0
20
40
60
80
100
10 -1 10 -2
10 -1
1
10
0
0
4
Ambient temperature Ta (C )
Collector current IC (mA)
2
, ,
d 8 12 16
RL = 1k
Distance d (mm)

▲Up To Search▲

Price & Availability of CNB1009

	To Download CNB1009 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .