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Datasheet File OCR Text: |
Central PROCESS DETAILS Die Size Die Thickness TM PROCESS CP178 Semiconductor Corp. NPN Darlington Transistor Power Transistor 131 x 131 MILS 12.5 1.0 MILS 27 x 36 MILS 20 x 37 MILS Al - 50,000A Ag - 10,000A Emitter Bonding Pad Area Base Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY PRINCIPAL DEVICE TYPES 2N6059 BACKSIDE COLLECTOR BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (12 -June 2003) |
Price & Availability of CP178
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