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| PROCESS Power Transistor CP309 Central TM NPN - Low Saturation Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 6,670 PRINCIPAL DEVICE TYPES CMPT3090L CXT3090L CZT3090L CMXT3090L EPITAXIAL PLANAR 41.3 x 41.3 MILS 9.0 MILS 9.5 x 9.2 MILS 12.8 x 10.2 MILS Al - 30,000A Au - 18,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (15- September 2003) Central TM PROCESS CP309 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (15- September 2003) |
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