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| Datasheet File OCR Text: |
| PROCESS Power Transistor CP312 Central TM NPN - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,200 E EPITAXIAL PLANAR 70 x 70 MILS 9.0 MILS 11.4 x 18 MILS 13.7 x 23.6 MILS Al - 30,000A Ti / Ni / Ag 11,300A PRINCIPAL DEVICE TYPES CZT3120 B BACKSIDE COLLECTOR R1 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (26-March 2004) Central TM PROCESS CP312 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (26-March 2004) |
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