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Datasheet File OCR Text: |
MITSUBISHI SEMICONDUCTOR THYRISTOR CR10C MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10C OUTLINE DRAWING Dimensions in mm (16.2) 1 2.0 MIN 26 MAX Unit V V V Unit A A A A2s A/s W W V V A C C kg*cm N*cm g 1.9 MIN 3 MIN 16 800 960 800 2 1 CATHODE 2 ANODE 3 GATE M6x1 LOCK WASHER SOLDERLESS TERMINAL NUT * IT (AV) ......................................................................... 10A * VDRM .................................................... 400V/600V/800V * IGT ..........................................................................30mA APPLICATION DC motor control, electric furnace control, static switches, DC supply MAXIMUM RATINGS Symbol VRRM VRSM VDRM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Voltage class 8 400 500 400 12 600 720 600 TELEGRAPH WIRE 1.04~2.63mm2 Note: Mica washer and spacer are provided only upon request. Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- -- Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Typical value Conditions Commercial frequency, sine half wave, 180 conduction, Tc=84C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VD=1/2VDRM, ITM=30A, IG=0.1A. Tj=25C, f=60Hz Ratings 15.5 10 200 165 100 5.0 0.5 10 5 2 -30 ~ +125 -30 ~ +125 30 2.94 8.8 11 MIN 2 3 10 MAX 19.5 MAX 1 3 8.7 MAX 14 Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR10C MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM dv/dt VGT VGD IGT tgt Rth (j-c) Rth (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical-rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Turn-on time Thermal resistance Contact thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied Tc=25C, ITM=30A, Instantaneous value Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, IT=0.5A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=0.5A Tc=25C, VD=100V, IT=10A, IG=0.1A Junction to case Case to fin, greased Limits Min. -- -- -- 20 -- 0.25 -- -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- Max. 3.0 3.0 1.6 -- 2.5 -- 30 10 2.0 0.55 Unit mA mA V V/s V V mA s C/W C/W PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 2 Tc = 125C 102 7 5 3 2 125C 101 7 5 3 2 100 0 0.5 1.0 1.5 2.0 2.5 3.0 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR10C MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE CHARACTERISTICS VFGM = 10V PGM = 5W 101 7 5 VGT = 2.5V PG(AV) = 3 IGT 2 0.5W Tj = 100 IFGM = 125C 7 2A 25C 5 -30C 3 2 VGD = 0.25V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 3 2 TRANSIENT THERMAL IMPEDANCE (C/W) 10-1 2 3 5 7 100 2.4 2.0 1.6 1.2 0.8 0.4 0 10-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 TIME (s) GATE VOLTAGE (V) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 32 CASE TEMPERATURE (C) 28 24 20 16 12 8 4 0 0 2 4 6 8 = 30 90 60 360 RESISTIVE, INDUCTIVE LOADS 10 12 14 16 180 120 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS 360 120 100 80 60 40 20 0 0 1 = 30 2 3 4 60 90 120 180 5 6 7 8 9 10 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 140 120 100 80 60 40 20 0 0 = 90C NATURAL CONVECTION AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (C) 360 RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 32 28 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 = 30 60 360 RESISTIVE LOADS 120 180 90 160 160 t4 120 120 t3 ALUMINUM PLATE PAINTED BLACK AND GREASED 1234567 180C 8 9 10 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR10C MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (C) 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 = 30 60 90 120 180 AMBIENT TEMPERATURE (C) 360 RESISTIVE LOADS ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 160 160 t4 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE 100 LOADS 80 NATURAL CONVECTION 60 = 90 40 20 0 0 2 4 6 180 8 10 12 14 16 18 20 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 16 DC CASE TEMPERATURE (C) 14 12 10 8 6 4 2 0 0 2 4 6 8 = 30 270 180 120 90 60 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 = 30 20 0 0 2 4 6 8 10 12 14 16 18 20 90 180 270 60 120 DC 360 RESISTIVE, INDUCTIVE LOADS 360 RESISTIVE, INDUCTIVE LOADS 10 12 14 16 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 160 160 t4 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE, 100 INDUCTIVE 80 60 40 20 0 0 2 4 6 = 90 180 DC LOADS NATURAL CONVECTION GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) 800 700 600 500 400 300 200 100 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER PULSE WIDTH (s) IT = 0.5A A 6V tw IGT 0.1s TYPICAL EXAMPLE 8 10 12 14 16 18 20 AVERAGE ON-STATE CURRENT (A) Feb.1999 |
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