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CS 300
Phase Control Thyristors
VRRM = 1200-1800 V IT(RMS) = 600 A IT(AV)M = 380 A
3 2 4
VRSM VDSM V 1300 1700 1900
VRRM VDRM V 1200 1600 1800
Type
1 4 2
CS 300-12io3 CS 300-16io3 CS 300-18io3
Not for new application
3
Symbol IT(RMS) IT(AV)M ITSM
Test Conditions TVJ = TVJM Tcase = 85C; 180 sine Tcase = 75C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 600 330 380 8500 9000 8000 8500 360 000 340 000 320 000 303 500 100 A A A A A A A A2s A2s A2s A2s A/s
1
1 = Anode, 2 = Cathode, 3 = Gate, 4 = Auxiliary Cathode
I2t
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Features Thyristor for line frequencies International flat base package Planar glassivated chip Long-term stability of blocking currents and voltages
q q q q
(di/dt)cr
TVJ = TVJM repetitive, IT = 1000 A f = 50 Hz, tP =200 s VD = 2/3 VDRM IG = 1 A non repetitive, IT = IT(AV)M diG/dt = 1 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = tP = 30 s 10 ms
Applications Motor control Power converter AC power controller
q q q q
500 1000 120 10 10 -40...+125 125 -40...+125
A/s V/s W W V C C C Nm lb.in. g
q q
(dv/dt)cr PGM VRGM TVJ TVJM Tstg Md Weight
Advantages Space and weight savings Simple mounting Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
Mounting torque
3.5 31 500
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 1999 IXYS All rights reserved
1-3
CS 300
Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 1000 A; TVJ = 25C Characteristic Values 40 1.43 1.0 0.43 2.0 2.8 150 250 0.2 1 100 100 2 150 0.09 0.12 1.55 1.55 50 mA V V m V V mA mA V mA mA mA s s K/W K/W mm mm m/s2
For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM
TVJ = 25C; tP = 10 s IG = 0.7 A; diG/dt = 0.7 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.7 A; diG/dt = 0.7 A/s
TVJ = TVJM; IT =330 A, tP = 300 s; di/dt = -20 A/s typ. VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM DC current DC current Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz
4 V 3
C
102 s
1250 A 1000
a
b
VG
tgd
B
IGT: TVJ= -40C
101
IT 750
2
IGT: TVJ= 25C
B
IGT: TVJ= 0C
TVJ= 125C TVJ= 25C
a
100
b
500
1
B
250
A IGD: TVJ= 25C IGD: TVJ=125C
0 0
100
200
300 IG
400 mA 500
10-1 10-2
10-1
100 IG
A 101
0 0.0
0.5
1.0
1.5 VT
V 2.0
Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe (c) 1999 IXYS All rights reserved
Fig. 2 Gate controlled delay time tgd a = limit; b = typical
Fig. 3 On-state characteristics a = typical; b = limit
2-3
CS 300
9000 A 8000 7000 ITSM 6000 5000 4000 3000 100 2000 1000 10-3 0 10-2 10-1 t 100 s 101 0 50 100 C 150 Tcase 200 500
VR = 0 V TVJ = 45C TVJ = 125C
A 400 IT(AV)M 300
Fig. 4 Surge overload current ITSM: crest value, t: duration
C 62 71 80 89 98 107 Tc 116 125 W 700 600 PT 500 400 300 200 100 0 0 100 200 300
Fig. 5 Maximum forward current at case temperature 180 sine
RthCA = 0.03 K/W+RthHA RthCA :
0.07 K/W 0.12 K/W 0.165 K/W 0.28 K/W 0.85 k/W
W 700 600 500 400 300 200 100 PT
DC 180 sin 120 sin 90 sin 60 sin 30 sin
400 500 A IT(AV)M
0 600
20
40
60
0 80 100 120 140C
Tamb
Fig. 6 Power dissipation versus on-state current and ambient temperature (sinusoidal current)
C 62 71 80 89 98 107 Tc 116 125
W 700 600 PT 500 400 300 200 100 0 0 100 200 300 400 500 A IT(AV)M 0 600 20 40
DC 180 120 90 60 30
RthCA = 0.03 K/W+RthHA RthCA :
W 700
600 0.07 K/W 0.12 K/W PT 0.165 K/W - K 25 (S) 500 0.28 K/W 0.85 k/W - K 25 (S) 400 300 200 100 0 80 100 120 140C
Tamb
60
Fig. 7 Power dissipation versus on-state current and ambient temperature (rectangular current) (c) 1999 IXYS All rights reserved
3-3

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