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| SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw CSFM101 Thru CSFM105 Reverse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop MINI SMA 0.161(4.10) 0.146(3.70) 0.012(0.30) Typ. 0.071(1.80) 0.055(1.40) Mechanical Data Case: Mini-SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.04 gram 0.035(0.90) Typ. 0.110(2.80) 0.094(2.40) 0.063(1.60) 0.055(1.40) 0.035(0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Typical. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CSFM 101 50 50 35 CSFM 102 100 100 70 CSFM 103 200 200 140 CSFM 104 400 400 280 CSFM 105 600 600 420 Unit V V V A 30 Io VF Trr IR R 0.95 35 1.0 1.3 1.5 50 A V nS uA 5.0 100 42 -55 to +150 -55 to +150 JA C/W C C Tj TSTG Note 1: Thermal resistance from junction to ambient. MDS0210018B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CSFM101 Thru CSFM105) Fig. 1 - Reverse Characteristics 1000 Tj=125 C 10 Fig.2 - Forward Characteristics CSFM101-103 Forward current ( A ) 1.0 100 Tj=75 C CSFM104 0.1 10 CSFM105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 1.0 Tj=25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) 0.001 0 0.2 0. 4 0.6 0.8 1.0 1.2 1.4 Forward Voltage (V) Fig. 3 - Junction Capacitance 14 Fig. 4 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) 30 8.3mS Single Half Sine Wave JEDEC methode 12 f=1.0MHz Vsig=50mVp-p Junction Capacitance (pF) 25 20 15 Tj=25 C 10 5 0 10 8 6 4 2 0 Tj=25 C 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210016B Page 2 |
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