 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TetraFET D2081UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 0 .3 2 0 .2 4 0 .1 0 0 .0 2 16 m ax. 13 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW - 12V - 1GHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss 1 .7 0 m ax. 10 m ax. 6 .7 6 .3 3 .1 2 .9 4 3 .7 7 .3 3 .3 6 .7 * SIMPLE BIAS CIRCUITS * LOW NOISE (Typical < 2dB NF) * HIGH GAIN - 11dB MINIMUM * SURFACE MOUNT 3 1 2 1 .0 5 0 .8 5 2 .3 0 4 .6 0 0 .8 0 0 .6 0 APPLICATIONS * VHF/UHF COMMUNICATIONS from DC to 2.5 GHz SOT-223 PIN 1 PIN 3 GATE SOURCE PIN 2 PIN 4 DRAIN DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 2W 65V 20V 200mA -65 to 125C 150C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96 D2081UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 750mW VDS = 12V f = 1GHz VDS = 0V VGS = -5V f = 1MHz f = 1MHz f = 1MHz VDS = 28V VGS = 0 VDS = 28V VGS = 0 IDQ = 75mA |D = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 1 0.18 11 40 10:1 65 Typ. Max. Unit V 1 1 7 mA A V mhos dB % -- 12 6 0.5 pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 70C / W S Parameters at Vd = 12V, Id = 75mA Freq MHz 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 mag 0.47 0.46 0.47 0.49 0.51 0.53 0.54 0.55 0.56 0.57 0.58 0.60 0.60 0.59 0.58 0.56 0.54 0.51 S12 ang -95 -120 -131 -146 -156 -163 -180 178 175 163 150 144 140 130 123 115 110 108 S21 ang 50 80 100 110 110 104 100 96 91 85 80 75 70 66 63 58 54 50 S22 ang 90 76 68 59 51 45 40 36 33 28 26 24 22 21 20 19 20 20 mag 0.04 0.05 0.07 0.10 0.15 0.20 0.25 0.29 0.34 0.40 0.45 0.48 0.52 0.55 0.58 0.60 0.62 0.62 mag 5.20 4.40 3.50 3.00 2.60 2.30 2.10 1.80 1.60 1.40 1.30 1.20 1.10 1.00 0.95 0.90 0.90 0.90 mag 0.32 0.35 0.38 0.43 0.48 0.54 0.58 0.60 0.63 0.65 0.66 0.66 0.66 0.65 0.65 0.64 0.64 0.63 ang -90 -91 -94 -98 -103 -108 -112 -116 -120 -126 -129 -133 -135 -138 -140 -142 -144 -145 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96 D2081UK TYPICAL PERFORMANCE BFM21 at 1GHz Bias Conditions Vd = 12V, Idq = 75mA 1000 900 800 700 Pow er O utput (m W ) BIAS C3 R1 T1 C1 C5 C2 C6 T2 C4 L1 T3 L2 C7 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 Pow er Input (m W ) +12V BFM21UK 1GHz Test Circuit C1, C7 C3, C4 L1 L2 33pF ATC100B 1-8pF T1 T2 T3 50 microstrip, 11mm long 50 microstrip, 15mm long 50 microstrip, 5mm long 1000pF NPO 0.1H 10mm of 1.6mm tcw (half turn) Prelim. 5/96 C2, C5, C6 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. |
Price & Availability of D2081UK
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |