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| TetraFET D2089UK METAL GATE RF SILICON FET MECHANICAL DATA H B 4 3 1 G (2 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 28V - 2GHz SINGLE ENDED FEATURES F E D 2 C (2 pls) A * SIMPLIFIED AMPLIFIER DESIGN GATE DRAIN PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS DIM A B C D E F G H Millimetres 25.40 45 0.76 5.21 DIA 1.02 0.13 3.18 3.18 Tol. 0.25 5 0.05 0.13 0.13 0.02 0.13 REF Inches 1.00 45 0.030 0.205 0.040 0.005 0.125 0.125 Tol. 0.010 5 0.002 0.005 0.005 0.001 0.005 REF * LOW NOISE * HIGH GAIN APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 4W 65V 20V 1A -65 to 150C 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96 D2089UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs Pout Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Power Output Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V f = 30MHz VDS = 0V |D = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A IDQ = 75mA Pin = 5mW VGS = -5V f = 1MHz f = 1MHz 1 0.18 750 65 Typ. Max. Unit V 1 1 7 mA A V mhos mW 12 6 0.5 pF VGS(th) Gate Threshold Voltage VDS = 28V VGS = 0 * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 30C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96 |
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