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TetraFET D2225UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V - 1GHz PUSH-PULL FEATURES H K L J E F G M * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 - SOURCE PIN 6 - GATE 2 PIN 7 - GATE 1 PIN 8 - SOURCE Tol. 0.08 0.08 0.08 0.08 0.08 0.08 0.08 +0.25 -0.00 Min. Max. Max. Min. Max. 0.08 Max. 0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45 0 7 0.008 0.086 0.180 Tol. 0.003 0.003 0.003 0.003 0.003 0.003 0.003 +0.010 -0.000 Min. Max. Max. Min. Max. 0.003 Max. 0.003 SO8 PACKAGE PIN 1 - SOURCE PIN 2 - DRAIN 1 PIN 3 - DRAIN 2 PIN 4 - SOURCE Dim. A B C D E F G H J K L M N P mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45 0 7 0.20 2.18 4.57 * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk 17.5W 40V 20V 4A -65 to 150C 200C Prelim. 2/99 D2225UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS VSWR Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 12.5V f = 1GHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 0.5 0.18 10 40 20:1 40 Typ. Max. Unit V 1 1 7 mA A V S dB % -- 12 10 1 pF pF pF TOTAL DEVICE PER SIDE VDS = 0V VGS = -5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 Reverse Transfer Capacitance VDS = 12.5V VGS = 0 Pulse Duration = 300 s , Duty Cycle 2% * Pulse Test: THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 6C / W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 2/99 |
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