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DG2016 New Product Vishay Siliconix High-Bandwidth, Low Voltage, Dual SPDT Analog Switch FEATURES D Single Supply (1.8 V to 5.5 V) D Low On-Resistance - rON: 2.4 W D Crosstalk and Off Isolation: -81 dB @ 1 MHz D MSOP-10 Package BENEFITS D D D D D Reduced Power Consumption High Accuracy Reduce Board Space Low-Voltage Logic Compatible High Bandwidth APPLICATIONS D D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Low-Voltage Data Acquisition ATE DESCRIPTION The DG2016 is a monolithic CMOS dual single-pole/double-throw (SPDT) analog switch. It is specifically designed for low-voltage, high bandwidth applications. The DG2016's on-resistance (3 W @ 2.7 V), matching and flatness are guaranteed over the entire analog voltage range. Wide dynamic performance is achieved with better than -80 dB for both cross-talk and off-isolation at 1 MHz. Both SPDT's operate with independent control logic, conduct equally well in both directions and block signals up to the power supply guaranteed. level when off. Break-before-make is With fast switching speeds, low on-resistance, high bandwidth, and low charge injection, the DG2016 is ideally suited for audio and video switching with high linearity. Built on Vishay Siliconix's low voltage CMOS technology, the DG2016 contains an epitaxial layer which prevents latch-up. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION MSOP-10 TRUTH TABLE IN1 NO1 GND NO2 IN2 1 2 3 4 5 10 9 8 7 6 COM1 NC1 V+ NC2 COM2 Logic 0 1 NC1 and NC2 ON OFF NO1 and NO2 OFF ON ORDERING INFORMATION Temp Range Package MSOP-10 Part Number DG2016DQ Top View -40 to 85C Document Number: 72030 S-22312--Rev. A, 20-Jan-03 www.vishay.com 1 DG2016 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Power Dissipation (Packages)b MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C New Product SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels Switch Off Leakage Current f VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V INO, INC = 10 mA V+ = 2.7 V VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Room Full Room Full Room Full - 0.25 - 2.5 - 0.25 - 2.5 - 0.25 - 2.5 0.01 0.01 0.01 0 3.0 V+ 4.8 5.3 1.6 0.2 0.25 2.5 0.25 2.5 0.25 2.5 nA W V Limits - 40 to 85_C Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Tempa Minb Typc Maxb Unit V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Digital Control Input High Voltaged Input Low Voltage Input Capacitance Input Current VINH Full Full Full VIN = 0 or V+ Full 1.6 0.4 5 1 1 VINL Cin V pF mA IINL or IINH Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON VNO or VNC = 2.0 V, RL = 50 W CL = 35 pF W, tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+, f = 1 MHz VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF, f = 1 MHz W, Room Full Room Full Full Room Room Room Room Room Room Room 1 38 - 78 - 82 15 15 49 45 pF dB pC 28 13 53 59 38 38 ns Power Supply Power Supply Current Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. Document Number: 72030 S-22312--Rev. A, 20-Jan-03 I+ VIN = 0 or V+ Full 0.01 1.0 mA www.vishay.com 2 DG2016 New Product SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Full Room Full Room Room Room Full Room Full Room Full - 0.25 - 2.5 - 0.25 - 2.5 - 0.25 - 2.5 0.01 0.01 0.01 0 2.4 V+ 4.0 4.3 1.2 0.2 0.25 2.5 0.25 2.5 0.25 2.5 nA W V Vishay Siliconix Limits - 40 to 85_C Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Tempa Minb Typc Maxb Unit V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Switch Off Leakage Current Digital Control Input High Voltaged Input Low Voltage Input Capacitance Input Current VINH Full Full Full VIN = 0 or V+ Full 2.0 0.8 5 1 1 V pF mA VINL Cin IINL or IINH Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced tON VNO or VNC = 3 V, RL = 50 W CL = 35 pF W, tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+, f = 1 MHz VNO or VNC = 3 V, RL = 50 W, CL = 35 pF CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF, f = 1 MHz W, Room Full Room Full Full Room Room Room Room Room Room Room 1 79 - 81 - 82 14 14 48 44 pF dB pC 23 8 48 52 33 35 ns Power Supply Power Supply Range Power Supply Current Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ VIN = 0 or V+ Full 1.8 0.01 5.5 1.0 V mA Document Number: 72030 S-22312--Rev. A, 20-Jan-03 www.vishay.com 3 DG2016 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage 8 7 r ON - On-Resistance ( W ) 6 5 4 3 2 1 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) V+ = 3.0 V, V+ = 5.0 V, T = 25_C IS = 10 mA r ON - On-Resistance ( W ) 5 rON vs. Analog Voltage and Temperature 4 V+ = 3 V 85_C 3 25_C - 40_C 2 V+ = 5 V 1 85_C 25_C - 40_C Supply Current vs. Temperature 10000 10 mA Supply Current vs. Input Switching Frequency 1 mA I+ - Supply Current (nA) I+ - Supply Current (A) 1000 100 mA 10 mA V+ = 5 V 100 V+ = 5 V VIN = 0 V 10 V+ = 3 V VIN = 0 V 1 mA 100 nA 1 - 60 10 nA - 40 - 20 0 20 40 60 80 100 10 100 1K 10 K 100 K 1M 10 M Temperature (_C) Input Switching Frequency (Hz) Leakage Current vs. Temperature 10000 V+ = 5 V 1000 Leakage Current (pA) INO(off), IINC(off) Leakage Current (pA) 50 25 0 100 75 Leakage vs. Analog Voltage V+ = 5 V ICOM(on) ICOM(off) INO(off), IINC(off) 100 ICOM(off) ICOM(on) - 25 - 50 - 75 10 1 - 60 - 100 - 40 - 20 0 20 40 60 80 100 0 1 2 3 4 5 Temperature (_C) VCOM, VNO, VNC - Analog Voltage (V) www.vishay.com 4 Document Number: 72030 S-22312--Rev. A, 20-Jan-03 DG2016 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature 60 RL = 50 W t ON / t OFF - Switching Time (m s) 50 Loss, OIRR, X TALK (dB) - 10 LOSS 10 Vishay Siliconix Insertion Loss, Off-Isolation Crosstalk vs. Frequency 40 tON V+ = 3 V - 30 30 - 50 OIRR - 70 20 tOFF V+ = 3 V 10 tON V+ = 5 V XTALK V+ = 5 V RL = 50 W tOFF V+ = 5 V 0 - 60 - 90 - 40 - 20 0 20 40 60 80 100 100 K 1M 10 M Frequency (Hz) 100 M 1G Temperature (_C) Switching Threshold vs. Supply Voltage 3.0 80 60 Q - Charge Injection (pC) 40 20 Charge Injection vs. Analog Voltage - Switching Threshold (V) 2.5 2.0 V+ = 5 V 0 - 20 V+ = 3 V - 40 - 60 1.5 1.0 VT 0.5 0.0 0 1 2 3 4 5 6 7 V+ - Supply Voltage (V) - 80 0 1 2 3 4 5 VCOM - Analog Voltage (V) TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM RL R L ) R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. RL 50 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF VINH 50% VINL tr t 5 ns tf t 5 ns FIGURE 1. Switching Time Document Number: 72030 S-22312--Rev. A, 20-Jan-03 www.vishay.com 5 DG2016 Vishay Siliconix TEST CIRCUITS V+ Logic Input COM VO RL 50 W CL 35 pF VINH VINL tr <5 ns tf <5 ns New Product V+ VNO VNC NO NC IN GND VNC = VNO VO Switch 0V Output 90% tD tD CL (includes fixture and stray capacitance) FIGURE 5. Break-Before-Make Interval V+ Rgen + Vgen VIN = 0 - V+ V+ NC or NO IN GND COM VOUT VOUT IN CL = 1 nF On DVOUT Off Q = DVOUT x CL On IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 2. Charge Injection V+ 10 nF 10 nF V+ NC or NO IN COM COM 0 V, 2.4 V RL GND 0V, 2.4 V IN V+ V+ COM Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz NC or NO GND Analyzer VCOM Off Isolation + 20 log V NO NC FIGURE 3. Off-Isolation FIGURE 4. Channel Off/On Capacitance www.vishay.com 6 Document Number: 72030 S-22312--Rev. A, 20-Jan-03 |
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