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DG2031
Vishay Siliconix
Low-Voltage, Sub 1-W, Dual SPDT Analog Switch
FEATURES
D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 0.45 W -71 dB OIRR @ 2.7 V, 100 kHz ESD Protection >2000 V MSOP-10 Package Available in Lead (Pb)-Free
BENEFITS
D D D D D Reduced Power Consumption High Accuracy Reduce Board Space 1.6-V Logic Compatible High Bandwidth
APPLICATIONS
D D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems Relay Replacement
DESCRIPTION
The DG2031 is a sub 1-W (0.75 W @ 2.7 V ) dual SPDT analog switch designed for low voltage applications. The DG2031 has on-resistance matching (less than 0.05 W @ 2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG2031 an ideal interface to low voltage DSP control signals. The DG2031 has fast switching speed (on/off time @ 34 and 24 ns) with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is -71 dB @ 100 kHz. The DG2031 is built on Vishay Siliconix's high-density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG2031 contains the additional benefit of 2,000-V ESD protection.
Packaged in space saving MSOP-10, the DG2031 is a high performance, low rON switch for battery powered applications. The DG2031 is available in both standard and lead (Pb)-free packaging. No lead is used in the manufacturing process, for the lead (Pb)-free version, either inside the device/package or on external terminations.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MSOP-10
V+ NO1 COM1 IN1 NC1 1 2 3 4 5 10 9 8 7 6 NO2 COM2 IN2 NC2 GND
TRUTH TABLE Logic
0 1
NC1 and NC2
ON OFF
NO1 and NO2
OFF ON
ORDERING INFORMATION
Top View
Temp Range
-40 to 85C
Package
MSOP-10 (with Tape and Reel)
Standard Part Number
DG2031DQ-T1
Lead (Pb)-Free Part Number
DG2031DQ-T1--E3
Document Number: 71966 S-41158--Rev. E, 21-Jun-04
www.vishay.com
1
DG2031
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . "300 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C ESD per Method 3015.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2 kV Power Dissipation (Packages)b MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd On-Resistance Match Between Channelsd VNO, VNC, VCOM rON rON Flatness DrDS(on) INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 3.3 V, VNO, VNC = 0.3 V/3 V VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V V+ = 2.7 V, VCOM = 0 6/1 5 V 27V 0.6/1.5 INO, INC = 100 mA Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 0.50 0.12 V+ 0.75 0.8 0.2 0.05 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Current
Digital Control
Input High Voltaged Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 9 1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF 20V W tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+, f = 1 MHz V+ VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF CL = 1 nF, VGEN = 1.5 V, RGEN = 0 W RL = 50 W, CL = 5 pF f = 100 KHz W pF, Room Full Room Full Full Room Room Room Room Room Room Room 2 34 24 10 4 -71 -71 117 115 367 368 pF pC dB 58 59 49 50 ns
Power Supply
Power Supply Range Power Supply Current V+ I+ VIN = 0 or V+ Full 1.8 0.01 5.5 1.0 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. www.vishay.com Document Number: 71966 S-41158--Rev. E, 21-Jun-04
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DG2031
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
1.2 1.0 r ON - On-Resistance ( W ) 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 VCOM - Analog Voltage (V) T = 25_C IA = 100 mA r ON - On-Resistance ( W ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1 2 3 4 5 VCOM - Analog Voltage (V) V+ = 2 V 85_C 25_C -40_C V+ = 3 V 85_C 25_C -40_C
rON vs. Analog Voltage and Temperature (NC1)
V+ = 3.0 V NC NO V+ = 5.0 V NC NO
V+ = 5 V 85_C 25_C -40_C
Supply Current vs. Temperature
100000 100 mA 10 mA I+ - Supply Current (A) 10000 I+ - Supply Current (nA) 1 mA 100 mA 10 mA 1 mA 100 nA 10 nA -40 -20 0 20 40 60 80 100
Supply Current vs. Input Switching Frequency
V+ = 5 V
1000
100
V+ = 5 V VIN = 0 V
V+ = 3 V VIN = 0 V
10 -60
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
10000 V+ = 5 V 400 Leakage Current (pA) Leakage Current (pA) 1000 ICOM(off) ICOM(on) 200 0 -200 -400 10 -60 -600 0 1 600
Leakage vs. Analog Voltage
V+ = 5 V
ICOM(off) ICOM(on)
100
INO(off), INC(off)
INO(off), INC(off)
-40
-20
0
20
40
60
80
100
2
3
4
5
Temperature (_C)
VCOM - Analog Voltage (V)
Document Number: 71966 S-41158--Rev. E, 21-Jun-04
www.vishay.com
3
DG2031
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
80 70 t ON / t OFF - Switching Time (ns) 60 50 40 30 20 10 0 -60 tOFF V+ = 5 V tON V+ = 3 V tOFF V+ = 2 V tOFF V+ = 3 V tON V+ = 5 V
Switching Time vs. Temperature
80 NO Switch RL = 50 W tON V+ = 2 V t ON / t OFF - Switching Time (ns) 70 60 50 40 30 20 10 0 -60
Switching Time vs. Temperature
NC Switch RL = 50 W
tON V+ = 2 V
tOFF V+ = 2 V
tON V+ = 3 V tONV+ = 5 V tOFF V+ = 3 V tOFF V+ = 5 V
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature (_C)
Temperature (_C)
LOSS 10
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
Switching Threshold vs. Supply Voltage
3.0 2.5 2.0 1.5 1.0 0.5 0.0
-10 Loss, OIRR, X TALK (dB)
XTALK -30
OIRR
-50 V+ = 5 V RL = 50 W -70
-90 100 K 1M 10 M Frequency (Hz) 100 M 1G
VT
- Switching Threshold (V)
Loss
0
1
2
3
4
5
6
7
V+ - Supply Voltage (V)
Charge Injection vs. Analog Voltage
350 250 Q - Charge Injection (pC) 150 50 V+ = 5 V -50 -150 -250 -350 0 1 2 3 4 5 VCOM - Analog Voltage (V) V+ = 3 V
www.vishay.com
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Document Number: 71966 S-41158--Rev. E, 21-Jun-04
DG2031
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM R L ) R ON RL RL 50 W CL 35 pF COM Switch Output VOUT Switch Output
VINH 50% VINL
tr t 5 ns tf t 5 ns
0.9 x VOUT 0V tON tOFF
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 50 W GND CL 35 pF VINH VINL tr t 5 ns tf t 5 ns
V+ VNO VNC NO NC IN
VNC = VNO VO Switch 0V Output
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make Interval
V+ VOUT Rgen + VIN = 0 - V+ V+ NC or NO IN GND COM VOUT CL = 1 nF IN On Off Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. On DVOUT
FIGURE 2. Charge Injection
Document Number: 71966 S-41158--Rev. E, 21-Jun-04
www.vishay.com
5
DG2031
Vishay Siliconix
TEST CIRCUITS
V+ 10 nF V+ NC or NO IN COM COM 0V, 2.4 V IN 10 nF
V+
V+ COM Meter 0 V, 2.4 V GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
RL Analyzer
NC or NO GND
VCOM Off Isolation + 20 log V NO NC
FIGURE 4. Off-Isolation
FIGURE 5. Channel Off/On Capacitance
www.vishay.com
6
Document Number: 71966 S-41158--Rev. E, 21-Jun-04

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