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| DS 9 DSA 9 Rectifier Diode Avalanche Diode VRRM = 800-1800 V IF(RMS) = 18 A IF(AV)M = 11 A VRSM V 900 1300 1700 1900 V(BR)minyx VRRM V 1300 1750 1950 V 800 1200 1600 1800 Standard Types DS 9-08F DS 9-12F Avalanche Types DSA 9-12F DSA 9-16F DSA 9-18F A C DO-203 AA C A M5 A = Anode C = Cathode x Only for Avalanche Diodes Symbol IF(RMS) IF(AVM) PRSM IFSM Test Conditions TVJ = TVJM Tcase = 150C; 180 sine DSA types, TVJ = TVJM, tp = 10 ms TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 18 11 4.5 250 265 200 220 310 295 200 190 -40...+180 180 -40...+180 A A kW A A A A A2s A2s A2s A2s C C C Nm lb.in. g Features International standard package, JEDEC DO-203 AA Planar glassivated chips q q Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 q q q TVJ TVJM Tstg Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM IF = 36 A; TVJ = 25C Mounting torque q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits 2.2-2.8 19-25 5 Dimensions in mm (1 mm = 0.0394") Characteristic Values 3 1.4 0.85 15 2.0 2.17 3.0 2.0 2.0 100 mA V V mW K/W K/W K/W mm mm m/s2 For power-loss calculations only TVJ = TVJM DC current 180 sine DC current Creepage distance on surface Strike distance through air Max. allowable acceleration Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-2 DS 9 DSA 9 50 A 40 IF 30 300 1000 800 A2s typ. lim. A 250 IFSM 200 VR = 0 V 50Hz, 80%VRRM TVJ = 45C TVJ = 180C I2t 600 400 TVJ= 180C TVJ= 25C 20 150 100 10 TVJ=45C 200 50 TVJ=180C 0 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF 0 10-3 100 10-2 10-1 100 s t 101 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward characteristics 25 W Fig. 2 Surge overload current IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms) 25 A RthJA : 20 PF 15 8.3 K/W 13 K/W (CU80x80) 18 K/W 20 IF(AV)M 15 DC d = 180 sin d = 120 d= 60 d= 30 10 DC 180 sin 120 60 30 10 5 5 0 0 5 10 15 IF(AV)M A 0 20 0 50 100 Tamb 0 150 C 200 0 50 100 150 200 C 250 Tcase Fig. 4 Power dissipation versus forward current and ambient temperature 5 K/W 4 ZthJH 3 30 60 120 180 DC Fig. 5 Max. forward current at case temperature RthJH for various conduction angles d: d DC 180 120 60 30 RthJH (K/W) 3.0 3.35 3.56 4.0 4.64 2 Constants for ZthJH calculation: i 1 2 3 4 Rthi (K/W) 0.095 0.515 1.39 1.0 ti (s) 0.00032 0.0102 0.360 2.30 1 0 10-3 10-2 10-1 100 101 102 103 s t 104 Fig. 6 Transient thermal impedance junction to heatsink (c) 2000 IXYS All rights reserved 2-2 |
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