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| HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface DSEA IFAV VRRM trr DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns Preliminary Data Sheet VRSM V 600 VRRM V 600 DSEA 59-06BC DSEC 59-06BC 1 1 2 3 2 3 Type 1 DSEC 2 3 ISOPLUS220TM E153432 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Symbol IR VF RthJC RthCH trr IRM Conditions Lead current limit TC = 105C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.3 A; L = 180 H VA = 1.5*VR typical; f = 10 kHz; repetitive Maximum Ratings 45 30 200 0.2 0.1 -40...+175 175 -40...+150 A A A mJ A C C C C W V~ g Features Isolated back surface* 1.6 mm (0.063 in) from case for 10 s TC = 25C 50/60 Hz RMS; IISOL 1 mA Mounting force typical Conditions TVJ = 25C TVJ = 150C IF = 30 A; VR = VRRM VR = VRRM TVJ = 150C TVJ = 25C 260 136 2500 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch See DSEP 29-06B data sheet for characteristic curves 11...65 / 2.5...15 N / lb Characteristic Values typ. max. 250 2 1.56 2.51 1.1 0.6 A mA V V K/W K/W ns A IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; TVJ = 100C IF = 50 A; -diF/dt = 100 A/s 30 4 Notes: Data given for TVJ = 25OC and per diode unless otherwise specified Average current per diode may be limited by center lead RMS current limit when both diodes are conducting. Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse test: pulse Width = 300 s, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved DS98817A(07/03) DSEA 59-06BC DSEC 59-06BC ISOPLUS220 Outline Notes: DSEA 29 1. Lead 1 = Cathode 2. Lead 2 = Common Anode 3. Lead 3 = Cathode DSEC 29 1. Lead 1 = Anode 2. Lead 2 = Common Cathode 3. Lead 3 = Anode Back surface 4 is electrically isolated from leads 1, 2 and 3 |
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