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| DSEP 29-06A DSEP 29-06AS DSEP 29-06B HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 600 V trr = 30/35 ns A C VRSM V 600 600 600 VRRM V 600 600 600 Type TO-220 AC C DSEP 29-06A DSEP 29-06AS DSEP 29-06B A C (TAB) TO-263 A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions rect., d = 0.5; TC (Version A, AS)= 135C TC (Version B) = 125C Maximum Ratings 35 30 30 250 200 0.2 0.1 -55...+175 175 -55...+150 A A A A A mJ A C C C W Nm g Features International standard package * Planar passivated chips * Very short recovery time l Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TVJ = 45C; tp = 10 ms (50 Hz), sine; (Version A, AS) (Version B) TVJ = 25C; non-repetitive IAS = 1.3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive TC = 25C mounting torque (Version A, B) typical 165 0.4...0.6 2 Symbol IR Conditions TVJ = 25C; VR = VRRM TVJ = 150C; VR = VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic max. Values Version A Version B 250 1 1.26 1.61 0.9 0.5 35 6 250 2 1.58 2.52 0.9 0.5 30 4 A mA V V K/W K/W ns A VF RthJC RthCH trr IRM typ. typ. typ. IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s; TVJ = 100C Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-3 417 DSEP 29-06A DSEP 29-06AS 70 A 60 IF 50 3000 50 A IRM 40 T = 100C nC VVJ = 300V R 2500 Qr 2000 TVJ= 100C VR = 300V TVJ=150C 40 30 1500 1000 500 10 TVJ=100C 30 20 10 0 0.0 IF= 60A IF= 30A IF= 15A IF= 60A IF= 30A IF= 15A 20 TVJ=25C 0.5 1.0 1.5 VF V2.0 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 130 ns 120 Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 1.2 s tfr 2.0 TVJ= 100C VR = 300V 1.5 Kf 1.0 trr 110 100 IF= 60A IF= 30A IF= 15A 10 tfr VFR 0.9 0.6 IRM 90 0.5 5 0.3 Qr 80 70 0 0 200 400 600 -diF/dt 800 A/s 1000 0 TVJ= 100C IF = 30A 200 400 0.0 600 A/s 1000 800 diF/dt 0.0 0 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 ZthJC 0.01 0.001 0.00001 DSEP 29-06A NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 417 (c) 2004 IXYS All rights reserved 2-3 DSEP 29-06B 100 A 80 IF 60 TVJ = 100C 40 TVJ = 150C Qr 200 150 100 20 TVJ = 25C 2 50 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt 350 nC 300 250 10 A IRM IF = 60 A IF = 30 A IF = 15 A 4 TVJ = 100C VR = 300 V 6 8 IF = 60 A IF = 30 A IF = 15 A TVJ = 100C VR = 300 V 0 0 1 2 3 VF V 4 Fig. 1 Forward current IF versus VF 2.0 Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 ns 120 TVJ = 100C VR = 300 V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 30 20 TVJ = 100C IF = 30 A 0.30 s 0.25 tfr 0.20 0.15 0.10 0.05 0.00 600 A/s 1000 800 diF/dt 1.5 Kf 1.0 trr 100 IF = 60 A IF = 30 A 80 IRM IF = 15 A 0.5 60 10 Qr 40 0 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 0 VFR tfr 0.0 0 40 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 2 3 Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 ZthJC 0.01 0.001 0.00001 DSEP 30-06B NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 417 (c) 2004 IXYS All rights reserved 3-3 |
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