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| DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 1200 V trr = 40 ns VRSM V 1200 1200 VRRM V 1200 1200 Type A C TO-247 AD Version A ISOPLUS 247TM Version AR DSEP 30-12A DSEP 30-12AR C A C (TAB) C A TAB A = Anode, C = Cathode Symbol IFRMS IFAVM Conditions rectangular, d = 0.5; TC (Vers. A) = 115C TC (Vers. AR)= 105C TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 11.5 A; L = 180 H VA = 1.25*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 A A Features 200 14 1.2 -55...+175 175 -55...+150 A mJ A C C C W W Nm N V~ g q q q q IFSM EAS IAR TVJ TVJM Tstg Ptot Md * FC VISOL ** Weight q q q q TC = 25C; Version A Version AR mounting torque mounting force with clip 50/60 Hz RMS; IISOL 1 mA; leads-to-tab typical 165 135 0.8...1.2 20...120 2500 6 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Version ..R isolated and UL registered E153432 Applications q q q q * Version A only; ** Version AR only Symbol IR x Conditions TVJ = 25C; VR = VRRM TVJ = 150C; VR = VRRM IF = 30 A; Version A Version AR TVJ = 150C TVJ = 25C Characteristic Values typ. max. 250 1 1.78 2.74 0.9 1.1 0.25 40 5.5 11.4 A mA V V K/W K/W K/W ns A q q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders VF y RthJC RthCH trr IRM Advantages q IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s TVJ = 100C q q Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf 018 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 DSEP 30-12A DSEP 30-12AR 70 A 60 IF 50 Qr 5 60 A 50 IRM 40 3 mC 4 TVJ= 100C VR = 600V TVJ= 100C VR = 600V TVJ=150C 40 TVJ=100C TVJ= 25C 30 20 2 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 1 10 0 0 1 2 3 VF V 4 0 100 10 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 220 ns 200 Fig. 3 Peak reverse current IRM versus -diF/dt 120 V VFR 80 1.2 2.0 TVJ= 100C VR = 600V TVJ= 100C IF = 30A tfr s tfr 0.8 1.5 Kf 1.0 trr 180 IRM 160 IF= 60A IF= 30A IF= 15A 40 VFR 0.4 0.5 Qr 0.0 0 40 80 120 C 160 TVJ 140 120 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 2 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation ..A: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0397 DSEP 30-12AR 1 K/W ZthJC 0.1 DSEP 30-12A Constants for ZthJC calculation ..AR: 0.01 i 1 2 3 4 0.0001 0.001 0.01 0.1 t s 1 Rthi (K/W) 0.368 0.1417 0.0295 0.5604 ti (s) 0.0052 0.0003 0.0004 0.0092 0.001 0.00001 Fig. 7 Transient thermal resistance junction to case 018 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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