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| DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10 16 0.356 16 A B C D E D CD G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data * * SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above 25C unless otherwise specified Symbol VDSS VGSS Note 1a Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 100 20 2.1 10 3.0 1.3 1.1 -65 to +150 All Dimensions in mm Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Maximum Power Dissipation Characteristic Unit V V A W C Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1 Symbol RQJA RQJC Value 42 12 Unit C/W C/W Notes: the 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user's board design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110C/W. DS11601 Rev.C-4 1 of 4 DT410EL Electrical Characteristics 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DRAIN-SOURCE AVALANCHE RATINGS (Note 2) Single Pulse Drain-Source Avalanche WDSS Energy Maximum Drain-Source Avalanche IAR Current OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj =55C Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125C Static Drain-Source On-Resistance Tj = 125C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- 528 85 20 9.0 72 49 47 10 1.5 5.6 -- -- -- 20 120 80 80 16 -- -- pF pF pF ns ns ns ns nC nC nC VDS = 80V, ID = 2.1A. VGS = 5.0V VDD = 50V, ID = 2.1A VGEN = 5.0V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz VGS(th) RDS (ON) ID(ON) gFS 1.0 0.65 -- 10 -- 1.5 1.1 0.2 0.37 -- 6.0 2.0 1.5 0.25 0.50 -- -- V W A m VDS = VGS, ID = 250A VGS = 5.0V, ID = 2.1A VGS = 5.0V, VDS = 5.0V VGS = 10V, ID = 2.1A BVDSS IDSS IGSSF IGSSR 100 -- -- -- -- -- -- -- -- -- -- 1.0 10 100 -100 V A nA nA VGS = 0V, ID = 250A VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -- -- -- -- 15 10 mJ A VDD = 50V, ID = 10A SWITCHING CHARACTERISTICS (Note 2) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS -- -- Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time VSD trr -- -- -- -- 2.3 1.3 150 A V ns VGS = 0V, IS = 2.3A (Note 2) VGS = 0V, IF = 2.3A, dlF / dt = 100A / s Notes: 2. Pulse Test: Pulse width l 300s, duty cycle l 2.0%. DS11601 Rev.C-4 2 of 4 DT410EL VGS = 10V 6.0 5.0 RDS(ON), NORMALIZED DRAIN-SOURCE 0N-RESISTANCE 10 4.0 3.5 2.0 VGS = 3.0V ID, DRAIN-SOURCE CURRENT (A) 8 6 1.5 3.5 4.0 5.0 6.0 3.0 4 1.0 10 2 2.5 0 0.5 0 1 2 3 4 5 6 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Current RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 ID = 2.1A VGS = 5V 10 VDS = 10V TJ = -55 C 125 8 ID, DRAIN CURRENT (A) 2.0 25 6 1.5 4 1.0 2 0.5 -50 0 50 100 150 175 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics Tj, JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature DS11601 Rev.C-4 3 of 4 DT410EL 20 10 10 s 0 10 ID, DRAIN CURRENT (A) s s 1m N) LI M IT m 10 DS (O s R 1s 1 s 10 dc VGS = 10V SINGLE PULSE RQJA = 42 C TA = 25 C 0.1 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design. DS11601 Rev.C-4 4 of 4 DT410EL |
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