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EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier (R) Major Ratings and Characteristics IF(AV) VRRM IFSM trr EAS Tj max. 1.0 A 1300 V 20 A 75 ns 15 mJ 150 C * nted Pate * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) Features * * * * * * * * Cavity-free glass-passivated junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency Avalanche surge energy capability Meets environmental standard MIL-S-19500 Meets MSL level 1, per J-STD-020C Solder Dip 260 C, 40 seconds Mechanical Data Case: DO-214BA, molded plastic over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Typical Applications For use in high voltage rectification of photoflash application Maximum Ratings TA = 25 C unless otherwise specified Parameter Device Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TA = 25 C, IAS = 1A, L = 30 mH Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM EAS TJ,TSTG Symbol EGF1T ET 1300 910 1300 1.0 20 15 - 55 to + 150 V V V A A mJ C Unit Document Number 88904 12-Aug-05 www.vishay.com 1 EGF1T Vishay General Semiconductor Electrical Characteristics TA = 25 C unless otherwise specified Parameter Maximum instantaneous Maximum DC reverse current Typical reverse recovery time Typical junction capacitance Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle Test condition at 1.0 A, Tj = 25 C at VRM (1) Tj = 25 C Tj = 125 C Symbol VF IR trr CJ EGF1T 3.0 5.0 50 75 8.0 Unit V A ns pF at IF = 0.5 A, IR =1.0 A, Irr = 0.25 A at 4.0 V, 1 MHz Thermal Characteristics TA = 25 C unless otherwise specified Parameter Typical thermal resistance Notes: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.95 x 0.95" (24 x 24 mm) copper pad areas (1) Symbol RJA RJL EGF1T 50 20 Unit C/W Ratings and Characteristics Curves (TA = 25 C unless otherwise specified) 1.5 25 Average Forward Current (A) 1.0 Forward Surge Current ( A ) 20 15 10 0.5 5 0.0 25 50 75 100 125 150 175 0 1 10 Number of Cycles 100 TI - Lead T emperature (C) Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Forward Surge Current www.vishay.com 2 Document Number 88904 12-Aug-05 EGF1T Vishay General Semiconductor 100 100 Instantaneous Forward Current ( A ) Tj=150C Tj=125C 1 Junction C apacitance ( pF ) Tj=25C 2.5 3 3.5 4 4.5 5 5.5 6 10 10 0.1 0.01 0 0.5 1 1.5 2 1 0.1 Instantaneous Forward V oltage ( V ) 1 10 100 Reverse V oltage ( V ) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance Per Leg 100 100 Tj=150C 10 Instantaneous Reverse Leakage Tj=125C 1 Current ( uA ) Transient Thermal Impedance ( C/W ) 50 60 70 80 90 100 10 0.1 Tj=25C 0.01 0.001 10 20 30 40 1 0.1 1 10 100 Percent of Rated Reverse Voltage ( % ) Pulse Duration , sec . ( t ) Figure 4. Typical Reverse Leakage Characteristics Figure 6. Typical Transient Thermal Impedance Package outline dimensions in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.076 MAX. (1.93 MAX.) 0.066 (1.68) 0.040 (1.02) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 MIN. (1.52 MIN.) 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.220 (5.58) REF 0.060 (1.52) 0.030 (0.76) 0.006 (0.152) TYP. 0.226 (5.74) 0.196 (4.98) 0.114 (2.90) 0.094 (2.39) Document Number 88904 12-Aug-05 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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