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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-302 EL-303 DIMENSIONS The EL-302 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount. (Unit : mm) FEATURES U ompact C ULow profile package U ow-cost L USidelooking plastic package APPLICATIONS U hotointerrupters P UOptical switches U oys T EL-302 EL-303 MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 5 50 0.5 75 -25~+85 -30~+100 240 Unit V mA A mW ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Symbol VF R I Ct PO *Ip **I *E (Ta=2...) 5 Conditions F= I 50mA VR=5V f=1MHz F= I 50mA F= I 50mA F= I 50mA Min. Typ. 25 0.7 940 50 ae 0 3 Max. 1.6 10 Unit. V *I A pF mW/sr nm nm deg. - 1- Infrared Emitting Diodes(GaAs) EL-302 EL-303 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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