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ESAC33M(C,N,D) (8A)
FAST RECOVERY DIODE
10.5 Max. 6.0 4.7
(200V / 8A)
Outline drawings, mm
O3.2+0.2 -0.1 4.5Max. 2.0
3.7 1.2 13.0 0.8 2.54 2.7
Min.
17.00.3 0.4
Features
Insulated package by fully molding High voltage by mesa design High reliability
JEDEC EIAJ
5.08
SC-67
Connection diagram
2 ESAC33MC 1 2 ESAC33MN 1 2 3 3
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions
ESAC33M-
D
1
3
Rating -02 200 200
Unit V V A A C C
Square wave, duty=1/2, Tc=95C Sine wave 10ms
8* 30 -40 to +150 -40 to +150
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25C Unless otherwise specified )
Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=2.0A VR=VRRM IF=0.1A, IR=0.1A Junction to case Max. 1.4 500 100 3.5 Unit V A ns C/W
(200V / 8A )
Characteristics
Forward characteristics
10 10 5 3 1.0
ESAC33M(C,N,D)(8A)
Reverse characteristics
IF [A]
1 0.5
IR [A]
0.1
0.01 0.005 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 100 200 300
VF [V]
VR [V]
Forward power dissipation
12 140 10 8 120
Output current-case temperature
WF 6 [W]
4 2
Tc [C] 100
80
60 0 0 1 2 3 4 5 6 0 2 4 6 8 10
Io [A]
Io [A]
Junction capacitance characteristics
100 30 50 30
Surge capability
Cj [pF]
10
10
IFSM [A]
5 3 5 3 5 10 30 50 100
1 1 3 5 10 30
VR [V]
[time] (at 50Hz)
(200V / 8A )
Transient thermal impedance
101
ESAC33M(C,N,D)(8A)
[C/W] 100
10-1 10-3
10-2
10-1
100
101
102
t [sec.]

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