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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 1.95 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 4A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 15 60 TYP 40WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 1.6 0.7 11 66 8 40 MIN 65 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 28.0 V, Vds = 0 V, Ids = 0.2 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1002 POUT VS PIN GRAPH F1002 POUT vs PIN 60 CAPACITANCE VS VOLTAGE F1B 2 DICE CAPACITANCE 18 17 16 Idq= 0.4A F=175 Mhz VDS = 28V 1000 50 40 15 14 13 EFFICIENCY = 75% 12 11 10 0 0.5 1 1.5 2 2.5 3 3.5 100 Coss 30 Ciss 20 10 Crss 10 0 PIN IN WATTS POUT GAIN 1 0 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F1B 2 DICE IV CURVE 12 ID AND GM VS VGS F1B 2 DIE GM & ID vs VGS 100 10 8 10 6 Id 4 1 2 0 0 2 4 6 8 10 Vds in Volts Gm 12 14 16 18 20 0.1 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V 2 4 6 8 10 12 14 Vgs in Volts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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