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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2021 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 7.5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance 5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 2.4 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 45 TYP 7.5WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 0.6 1.4 3.6 27 3 18 MIN 65 0.6 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.03 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.06 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 3 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F2021 POUT VS PIN GRAPH F2021 POUT VS PIN FREQ = 1000 MHZ, IDQ = 0.6A; VDS=28V CAPACITANCE VS VOLTAGE F2A 3 DIE CAPACITANCE VS VDS 14 11.5 11 10.5 100 12 10 10 GAIN 8 POUT 9.5 10 6 9 8.5 4 Efficiency = 35% 2 8 7.5 7 0 0.5 1 PIN IN WATTS Ciss Coss Crss 0 1.5 2 2.5 1 0 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F2A 3 DIE IV CURVE 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 VDS IN VOLTS VGS = 2V VGS = 4V VGS = 6V VGS = 8V VGS = 10V VGS 12V ID AND GM VS VGS F2A 3 DIE GM & ID vs VGS 10 Id 1 Gm 0.1 12 14 16 18 20 0.01 0 2 4 6 8 10 12 14 16 18 Vgs in Volts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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