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| SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 2 - DECEMBER 1998 FEATURES FCX1047A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 40m at 4A FCX1147A 047 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 35 10 5 20 4 1 2 -55 to +150 UNIT V V V A A W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES VCE(sat) Min 35 35 10 35 5 0.3 0.3 0.3 25 50 140 160 220 920 860 280 290 300 200 200 60 430 440 450 350 330 110 150 85 130 230 10 10 10 40 70 200 240 350 1000 950 Typ Max UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100A IC=100A IC=10mA IC=100A, VEB=1V IE=100A VCB=20V VEB=4V VCES=20V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=4A, IB=50mA* IC=5A, IB=25mA* IC=4A, IB=50mA* IC=4A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* MHz pF ns ns IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, IB=40mA, VCC=10V IC=4A, IB=40mA, VCC=10V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX1047A TYPICAL CHARACTERISTICS +25C IC/IB=100 0.6 0.6 -55C +25C +100C +150C 0.4 IC/IB=200 IC/IB=100 IC/IB=50 0.4 0.2 0.2 0 1m 0 10m 100m 1 10 100 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC VCE=2V IC/IB=100 800 +100C +25C -55C 1 0.8 0.6 600 400 0.4 200 0.2 0 1m -55C +25C +100C +150C 0 1m 10m 100m 1 10 100 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 100 VCE=2V 1 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10 100 -55C +25C +100C +150C DC 1s 100ms 10ms 1ms 100s 10 1 0.1 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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