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| FDC606P December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications. Features * -6 A, -12 V. RDS(ON) = 26 m @ VGS = -4.5 V RDS(ON) = 35 m @ VGS = -2.5 V RDS(ON) = 53 m @ VGS = -1.8 V Applications * Battery management * Load switch * Battery protection * Fast switching speed * High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -12 8 (Note 1a) Units V V A W C -6 -20 1.6 0.8 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 C/W C/W Package Marking and Ordering Information Device Marking .606 Device FDC606P Reel Size 7'' Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDC606P Rev E (W) FDC606P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -12 Typ Max Units V Off Characteristics ID = -250 A,Referenced to 25C VDS = -10 V, VGS = 8 V, VGS = -8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = -250 A -0.4 -0.5 2.5 21 26 34 28 -20 25 1699 679 423 11 10 89 70 VDS = -6 V, VGS = -4.5 V ID = -6 A, 18 3 4.2 -1.3 (Note 2) -3 -1 100 -100 -1.5 mV/C A nA nA V mV/C 26 35 53 35 m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 A,Referenced to 25C VGS = -4.5 V, ID = -6 A VGS = -2.5 V, ID = -5 A VGS = -1.8 V, ID = -4 A VGS = -4.5 V, ID = -6 A,TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -6 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) A S pF pF pF 19 20 142 112 25 ns ns ns ns nC nC nC A V Dynamic Characteristics VDS = -6 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -6 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A -0.6 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. 2 78C/W when mounted on a 1in pad of 2oz copper on FR-4 board. a. b. 156C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDC606P Rev E (W) FDC606P Typical Characteristics 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V -ID, DRAIN CURRENT (A) 15 -2.5V 2.6 -1.8V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 -ID, DRAIN CURRENT (A) VGS=-1.5V 10 -1.5V -1.8V -2.0V -2.5V -3.0V -4.5V 15 20 5 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.2 RDS(ON), ON-RESISTANCE (OHM) ID = -6A VGS = -4.5V ID = -3A 0.07 0.06 0.05 1.1 TA = 125oC 0.04 0.03 0.02 0.01 1 0.9 TA = 25oC 0.8 -50 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 125 C -ID, DRAIN CURRENT (A) 15 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC VDS = -5V TA = -55oC 25oC 10 5 0 0.5 0.75 1 1.25 1.5 1.75 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC606P Rev E (W) FDC606P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 2500 ID = -6A VDS = -4V -6V 2000 CAPACITANCE (pF) -8V CISS f = 1 MHz VGS = 0 V 4 3 1500 COSS 1000 CRSS 500 2 1 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 0 0 3 6 9 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s DC VGS = -4.5V SINGLE PULSE RJA = 156oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 100s 10 Figure 8. Capacitance Characteristics. 8 SINGLE PULSE RJA = 156C/W TA = 25C 6 1 4 0.1 2 0 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 156 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC606P Rev E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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